Guillemard Charles, Zhang Wei, Malinowski Gregory, de Melo Claudia, Gorchon Jon, Petit-Watelot Sebastien, Ghanbaja Jaafar, Mangin Stéphane, Le Fèvre Patrick, Bertran Francois, Andrieu Stéphane
Institut Jean Lamour, UMR CNRS 7198, Université de Lorraine, Nancy, 54500, France.
Synchrotron SOLEIL-CNRS, Saint-Aubin, Gif-sur-Yvette, 91192, France.
Adv Mater. 2020 Jul;32(26):e1908357. doi: 10.1002/adma.201908357. Epub 2020 May 26.
Engineering of magnetic materials for developing better spintronic applications relies on the control of two key parameters: the spin polarization and the Gilbert damping, responsible for the spin angular momentum dissipation. Both of them are expected to affect the ultrafast magnetization dynamics occurring on the femtosecond timescale. Here, engineered Co MnAl Si Heusler compounds are used to adjust the degree of spin polarization at the Fermi energy, P, from 60% to 100% and to investigate how they correlate with the damping. It is experimentally demonstrated that the damping decreases when increasing the spin polarization from 1.1 × 10 for Co MnAl with 63% spin polarization to an ultralow value of 4.6 × 10 for the half-metallic ferromagnet Co MnSi. This allows the investigation of the relation between these two parameters and the ultrafast demagnetization time characterizing the loss of magnetization occurring after femtosecond laser pulse excitation. The demagnetization time is observed to be inversely proportional to 1 - P and, as a consequence, to the magnetic damping, which can be attributed to the similarity of the spin angular momentum dissipation processes responsible for these two effects. Altogether, the high-quality Heusler compounds allow control over the band structure and therefore the channel for spin angular momentum dissipation.
自旋极化和吉尔伯特阻尼,它们负责自旋角动量的耗散。预计这两者都会影响在飞秒时间尺度上发生的超快磁化动力学。在此,工程化的Co MnAl Si 赫斯勒化合物用于将费米能级处的自旋极化程度P从60%调整到100%,并研究它们与阻尼的相关性。实验证明,当自旋极化从具有63%自旋极化的Co MnAl的1.1×10增加到半金属铁磁体Co MnSi的超低值4.6×10时,阻尼减小。这使得能够研究这两个参数与表征飞秒激光脉冲激发后磁化损失的超快退磁时间之间的关系。观察到退磁时间与1 - P成反比,因此与磁阻尼成反比,这可归因于导致这两种效应的自旋角动量耗散过程的相似性。总之,高质量的赫斯勒化合物允许控制能带结构,从而控制自旋角动量耗散的通道。