Fares Chaker, Elhassani Randy, Partain Jessica, Hsu Shu-Min, Craciun Valentin, Ren Fan, Esquivel-Upshaw Josephine F
Chemical Engineering Department, University of Florida College of Engineering, Gainesville, FL 32611, USA.
Department of Restorative Dental Sciences, University of Florida College of Dentistry, Gainesville, FL 32610, USA.
Materials (Basel). 2020 May 21;13(10):2375. doi: 10.3390/ma13102375.
To improve the chemical durability of SiC-based coatings on glass-ceramics, the effects of annealing and N plasma treatment were investigated. Fluorapatite glass-ceramic disks were coated with SiC via plasma-enhanced chemical vapor deposition (PECVD), treated with N plasma followed by an annealing step, characterized, and then immersed in a pH 10 buffer solution for 30 days to study coating delamination. Post-deposition annealing was found to densify the deposited SiC and lessen SiC delamination during the pH 10 immersion. When the SiC was treated with a N plasma for 10 min, the bulk properties of the SiC coating were not affected but surface pores were sealed, slightly improving the SiC's chemical durability. By combining N plasma-treatment with a post-deposition annealing step, film delamination was reduced from 94% to 2.9% after immersion in a pH 10 solution for 30 days. X-ray Photoelectron spectroscopy (XPS) detected a higher concentration of oxygen on the surface of the plasma treated films, indicating a thin SiO layer was formed and could have assisted in pore sealing. In conclusion, post-deposition annealing and N plasma treatment where shown to significantly improve the chemical durability of PECVD deposited SiC films used as a coating for glass-ceramics.
为提高微晶玻璃上碳化硅基涂层的化学耐久性，研究了退火和氮等离子体处理的效果。通过等离子体增强化学气相沉积（PECVD）在氟磷灰石微晶玻璃圆盘上涂覆碳化硅，先进行氮等离子体处理，然后进行退火步骤，对其进行表征，接着将其浸入pH值为10的缓冲溶液中30天，以研究涂层分层情况。发现沉积后退火可使沉积的碳化硅致密化，并减少在pH值为10的浸泡过程中碳化硅的分层。当碳化硅用氮等离子体处理10分钟时，碳化硅涂层的整体性能未受影响，但表面孔隙被封闭，略微提高了碳化硅的化学耐久性。通过将氮等离子体处理与沉积后退火步骤相结合，在pH值为10的溶液中浸泡30天后，薄膜分层从94%降至2.9%。X射线光电子能谱（XPS）检测到等离子体处理薄膜表面的氧浓度较高，表明形成了一层薄的二氧化硅层，可能有助于孔隙封闭。总之，沉积后退火和氮等离子体处理被证明可显著提高用作微晶玻璃涂层的PECVD沉积碳化硅薄膜的化学耐久性。
