He Xin, Wen Yan, Zhang Chenhui, Lai Zhiping, Chudnovsky Eugene M, Zhang Xixiang
Physical Science and Engineering Division, King Abdullah University of Science and Technology (KAUST), Thuwal 23955-6900, Saudi Arabia.
Physics Department, Lehman College and Graduate School, The City University of New York, 250 Bedford Park Boulevard West, Bronx, New York 10468-1589, USA.
Nanoscale. 2020 Jun 11;12(22):12076-12082. doi: 10.1039/d0nr03902k.
We investigate the transport properties of a NbSe2 nanodevice consisting of a thin region, a thick region and a step junction. The superconducting critical current density of each region of the nanodevice has been studied as a function of temperature and magnetic field. We find that the critical current density has similar values for both the thin and thick regions away from the junction, while the critical current density of the thin region of the junction increases to approximately 1.8 times as compared with the values obtained for the other regions. We attribute such an enhancement of critical current density to the vortex pinning at the surface step. Our study verifies the enhancement of the critical current density by the geometrical-type pinning and sheds light on the application of 2D superconductors.
我们研究了由一个薄区域、一个厚区域和一个阶梯结组成的NbSe2纳米器件的输运特性。已研究了该纳米器件各区域的超导临界电流密度随温度和磁场的变化。我们发现，在远离结的薄区域和厚区域，临界电流密度具有相似的值，而结处薄区域的临界电流密度与其他区域相比增加到约1.8倍。我们将临界电流密度的这种增强归因于表面阶梯处的涡旋钉扎。我们的研究验证了几何型钉扎对临界电流密度的增强作用，并为二维超导体的应用提供了启示。
