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由金属氧化物半导体控制晶闸管触发的微芯片爆炸箔起爆器的发火性能

Firing Performance of Microchip Exploding Foil Initiator Triggered by Metal-Oxide-Semiconductor Controlled Thyristor.

作者信息

Wang Ke, Zhu Peng, Xu Cong, Zhang Qiu, Yang Zhi, Shen Ruiqi

机构信息

School of Chemical Engineering, Nanjing University of Science and Technology, Nanjing 210094, China.

Micro-Nano Energetic Devices Key Laboratory, Ministry of Industry and Information Technology, Nanjing 210094, China.

出版信息

Micromachines (Basel). 2020 May 29;11(6):550. doi: 10.3390/mi11060550.

Abstract

In this paper, microchip exploding foil initiators were fabricated by micro-electro-mechanical system scale fabrication methods, such as magnetron sputtering, photolithography, and chemical vapor deposition. A small-scale capacitor discharge unit based on the metal-oxide-semiconductor controlled thyristor was designed and produced to study the performance of the microchip exploding foil initiator. The discharge performance of the capacitor discharge unit without load and the effect of protection devices on the metal-oxide-semiconductor controlled thyristor were studied by the short-circuit discharge test. Then, the electric explosion characteristic of the microchip exploding foil initiator was also conducted to study the circuit current, peak power, deposited energy, and other parameters. Hexanitrostilbene refined by ball-milling and microfluidic technology was adopted to verify the initiation capability of the microchip exploding foil initiator triggered by the metal-oxide-semiconductor controlled thyristor. The results showed that the average inductance and resistance of the capacitor discharge circuit were 22.07 nH and 72.55 mΩ, respectively. The circuit peak current reached 1.96 kA with a rise time of 143.96 ns at 1200 V/0.22 μF. Hexanitrostilbene fabricated by ball-milling and microfluidic technology was successfully initiated at 1200 V/0.22 μF and 1100 V/0.22 μF, respectively.

摘要

在本文中,通过微机电系统规模制造方法,如磁控溅射、光刻和化学气相沉积,制造了微芯片爆炸箔起爆器。设计并制作了基于金属氧化物半导体控制晶闸管的小型电容器放电单元,以研究微芯片爆炸箔起爆器的性能。通过短路放电试验研究了电容器放电单元的无负载放电性能以及保护装置对金属氧化物半导体控制晶闸管的影响。然后,还对微芯片爆炸箔起爆器的电爆炸特性进行了研究,以获取电路电流、峰值功率、沉积能量等参数。采用通过球磨和微流控技术精制的六硝基芪来验证由金属氧化物半导体控制晶闸管触发的微芯片爆炸箔起爆器的起爆能力。结果表明,电容器放电电路的平均电感和电阻分别为22.07 nH和72.55 mΩ。在1200 V/0.22 μF时,电路峰值电流达到1.96 kA,上升时间为143.96 ns。通过球磨和微流控技术制造的六硝基芪分别在1200 V/0.22 μF和1100 V/0.22 μF时成功起爆。

https://cdn.ncbi.nlm.nih.gov/pmc/blobs/f72b/7345516/dcff4c15452a/micromachines-11-00550-g001.jpg

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