Lin Shu-Yu, Chou Sheng-Lung, Lin Meng-Yeh, Huang Wen-Jian, Huang Tzu-Ping, Wu Yu-Jong
National Synchrotron Radiation Research Center, Hsinchu Science Park, 101 Hsin-Ann Road, Hsinchu 30076, Taiwan.
J Chem Phys. 2020 May 29;152(20):204308. doi: 10.1063/5.0010293.
The infrared (IR) spectrum of monobridged SiH (denoted as mbr-SiH) isolated in solid Ar was recorded, and a set of lines (in the major matrix site) observed at 858.3 cm, 971.5 cm, 999.2 cm, 1572.7 cm, 2017.7 cm, 2150.4 cm, and 2158.4 cm were characterized. The species was produced by the electron bombardment of an Ar matrix sample containing a small proportion of SiH during matrix deposition. Upon photolysis of the matrix samples using 365 nm and 160 nm light, the content of mbr-SiH increased. The band positions, relative intensity ratios, and D-isotopic shift ratios of the observed IR features are generally in good agreement with those predicted by the B3LYP/aug-cc-pVTZ method. In addition, the photochemistry of the observed products was discussed.
记录了在固态氩中分离出的单桥连硅氢（记为mbr-SiH）的红外（IR）光谱，并对在858.3厘米、971.5厘米、999.2厘米、1572.7厘米、2017.7厘米、2150.4厘米和2158.4厘米处观察到的一组谱线（在主要基质位点）进行了表征。该物种是在基质沉积过程中通过对含有少量硅氢的氩基质样品进行电子轰击产生的。使用365纳米和160纳米光对基质样品进行光解后，mbr-SiH的含量增加。观察到的红外特征的谱带位置、相对强度比和D-同位素位移比与B3LYP/aug-cc-pVTZ方法预测的结果总体上吻合良好。此外，还讨论了观察到的产物的光化学性质。
