Zhong Yujia, Zhang Li, Chen Wenduo, Zhu Hongwei
State Key Laboratory of New Ceramics and Fine Processing, School of Materials Science and Engineering, Tsinghua University, Beijing 100084, People's Republic of China.
Nanotechnology. 2020 Sep 18;31(38):385203. doi: 10.1088/1361-6528/ab9a77. Epub 2020 Jun 8.
Van der Waals (vdW) heterojunctions based on two-dimensional materials have attracted great attention in emerging photoelectronics. However, the low-efficiency growth of single crystals significantly limits the practical applications of vdW heterojunctions. Here, we report a macro SnSe/SnSe heterojunction assembled by conformally transferring in-plane p-type SnSe on n-type SnSe synthesized by chemical vapor deposition. With well-matched band alignments, the SnSe/SnSe vdW photodetector exhibits dramatically enhanced performance with a responsivity of 17.5 mA W and a response time of 17 ms, comparing with the sole SnSe or SnSe based photodetector.
基于二维材料的范德华（vdW）异质结在新兴光电子学领域引起了极大关注。然而，单晶的低效率生长显著限制了vdW异质结的实际应用。在此，我们报道了一种通过在化学气相沉积合成的n型SnSe上共形转移面内p型SnSe组装而成的宏观SnSe/SnSe异质结。由于能带排列匹配良好，与单独的SnSe或基于SnSe的光电探测器相比，SnSe/SnSe vdW光电探测器表现出显著增强的性能，响应度为17.5 mA/W，响应时间为17 ms。
