Bansal Shonak, Prakash Krishna, Sharma Kuldeep, Sardana Neha, Kumar Sanjeev, Gupta Neena, Singh Arun K
Department of Electronics and Communication Engineering, Punjab Engineering College (Deemed to be University), Sector-12, Chandigarh, India.
Nanotechnology. 2020 Oct 2;31(40):405205. doi: 10.1088/1361-6528/ab9da8. Epub 2020 Jun 17.
This paper presents three self-powered photodetectors namely, p-bilayer graphene (BLG)/n-ZnO nanowires (NWs), p-BLG/n-Si NWs/p-Si and p-BLG/n-ZnO NWs/p-Si. The Silvaco Atlas TCAD software is utilized to characterize the optoelectronic properties of all the devices and is validated by analytical modeling. The proposed dual-junction photodetectors cover broadband spectral response varying from ultraviolet to near-infrared wavelengths. The dual-heterojunction broadband photodetector exhibits photocurrent switching with the rise and fall time of 1.48 and 1.27 ns, respectively. At -0.5 V bias, the highest external quantum efficiency, photocurrent responsivity, specific detectivity, and the lowest noise equivalent power of 71%, 0.28 A W, 4.2 × 10 cmHz W, and 2.59 × 10 W, respectively, are found for the dual-heterojunction device with a wavelength of 480 nm at 300 K. The proposed nanowires based photodetectors offer great potential to be utilized as next-generation optoelectronic devices.
本文介绍了三种自供电光电探测器，即p型双层石墨烯（BLG）/n型氧化锌纳米线（NWs）、p型BLG/n型硅纳米线/p型硅以及p型BLG/n型氧化锌纳米线/p型硅。利用Silvaco Atlas TCAD软件对所有器件的光电特性进行表征，并通过解析模型进行验证。所提出的双结光电探测器覆盖从紫外到近红外波长的宽带光谱响应。双异质结宽带光电探测器的光电流开关上升和下降时间分别为1.48 ns和1.27 ns。在-0.5 V偏压下，对于300 K时波长为480 nm的双异质结器件，分别测得最高外部量子效率为71%、光电流响应率为0.28 A/W、比探测率为4.2×10 cmHz/W以及最低噪声等效功率为2.59×10 W。所提出的基于纳米线的光电探测器具有作为下一代光电器件的巨大潜力。
