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High-Brightness Red-Emitting Phosphor La(Si,Al)(O,N):Ce for Next-Generation Solid-State Light Sources.

作者信息

Nitta Mitsuru, Nagao Nobuaki, Nomura Yuki, Hirasawa Taku, Sakai Yuki, Ogata Takahiro, Azuma Masaki, Torii Shuki, Ishigaki Toru, Inada Yasuhisa

机构信息

Technology Division, Panasonic Corporation, 1006 Kadoma, Kadoma, Osaka 571-8508, Japan.

Engineering Division, Life Solutions Company, Panasonic Corporation, 1006 Kadoma, Kadoma, Osaka 571-8501, Japan.

出版信息

ACS Appl Mater Interfaces. 2020 Jul 15;12(28):31652-31658. doi: 10.1021/acsami.0c09342. Epub 2020 Jul 6.

DOI:10.1021/acsami.0c09342
PMID:32564587
Abstract

A novel high-brightness red-emitting phosphor, La(Si,Al)(O,N):Ce (LSA), which can potentially be used as a laser-excited light source, is demonstrated. Laser-excited phosphor system has great potential for use as a white-light source, as it is orders of magnitude brighter than white LEDs. Although conventional yellow-green phosphors show excellent luminescent properties even under high-power laser excitation, red-emitting phosphors, which are essential to achieve a high color-rendering index and low color-temperature, show quantum efficiency quenching. This limits the output power in multiphosphor excitation systems. Ce should successfully tolerate high-power excitation due to the shortest emission lifetime seen in rare-earth ions, caused by the 5d-4f spin-allowed transition; however, a red-emitting Ce-doped phosphor of practical use has not been realized. LSA is described by the crystal-field modification of a yellow-emitting phosphor, LaSiN:Ce, with substitution of Al in Si sites. LSA shows 640 nm red emission together with tolerance for high-power excitation and thermal quenching, suggesting its significant potential for industrial applications that require ultrahigh brightness.

摘要

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