Sinha Rupam, Roy Nirmal, Mandal Tapas K
Department of Chemical Engineering, Indian Institute of Technology Guwahati, Guwahati, Assam 781039, India.
Centre for Nanotechnology, Indian Institute of Technology Guwahati, Guwahati, Assam 781039, India.
ACS Appl Mater Interfaces. 2020 Jul 22;12(29):33428-33438. doi: 10.1021/acsami.0c10484. Epub 2020 Jul 7.
The fabrication of flexible as well as self-powered optoelectronic devices is a growing and challenging area of research. Some scientists have reported the fabrication of either flexible or self-powered photodetectors recently. However, most of the literature studies fail to report the fabrication of self-powered as well as flexible photodetectors. This study reports the fabrication of self-powered, carbon dot (CD)-enhanced, flexible ZnO/graphite heterojunction-based UV detector where cellulose paper has been used as the substrate. A detailed study on the crystallinity and the defects of the ZnO nanorods has been done with appropriate characterizations. The CD-enhanced ZnO/graphite heterojunction showed Schottky characteristics. The Schottky parameters such as the barrier height, ideality factor, and the series resistance have also been calculated using the Cheung-Cheung method. The observed values of barrier height, ideality factor, and the series resistance are 0.74 eV, 3.74, and 503 kΩ, respectively. The transient response at self-powered condition has been demonstrated. The response time and the recovery time at self-powered condition have also been calculated with the help of the transient response, and those values are ∼2 and ∼3.2 s, respectively. The responsivity and the specific detectivity of the fabricated UV detector have been calculated as 9.57 mA/W and 4.27×10 Jones, respectively, at 330 nm wavelength, which is quite comparable with literature-reported values, considering a self-powered photodetector.
柔性以及自供电光电器件的制造是一个不断发展且具有挑战性的研究领域。最近,一些科学家报道了柔性或自供电光电探测器的制造。然而,大多数文献研究未能报道自供电且柔性光电探测器的制造。本研究报道了一种以纤维素纸为基底的自供电、碳点(CD)增强的柔性ZnO/石墨异质结紫外探测器的制造。通过适当的表征对ZnO纳米棒的结晶度和缺陷进行了详细研究。CD增强的ZnO/石墨异质结表现出肖特基特性。还使用Cheung-Cheung方法计算了诸如势垒高度、理想因子和串联电阻等肖特基参数。势垒高度、理想因子和串联电阻的观测值分别为0.74 eV、3.74和503 kΩ。展示了自供电条件下的瞬态响应。借助瞬态响应还计算了自供电条件下的响应时间和恢复时间,这些值分别约为2 s和3.2 s。在330 nm波长下,所制造的紫外探测器的响应度和比探测率分别计算为9.57 mA/W和4.27×10琼斯,考虑到自供电光电探测器,这与文献报道的值相当。