Solution-Based Indium-Zinc Oxide/Indium-Gallium-Zinc Oxide Double-Channel Thin-Film Transistors with Incorporated Hydrogen Peroxide.

We fabricated and evaluated solution-based double-channel thin-film transistors (TFTs) that consisted of an indium-zinc oxide (IZO) front layer and an indium-gallium-zinc oxide (IGZO) back channel with the addition of hydrogen peroxide (H₂O₂). The devices showed superior electrical properties with regard to saturation mobility (12.9 cm₂/V·s), the on-off ratio (5 × 10), and the subthreshold swing (0.21 V/decade). All the devices were subjected under bias and illumination stress for reliability assessment. The threshold voltage shift stability of positive and negative bias illumination stress under different wavelengths was also enhanced. Thus, we achieved improved performance using IZO/IGZO TFTs with back channels that incorporated H₂O₂.