Defect Analysis and Reliability Characteristics of (HfZrO₄)(SiO₂) High- Dielectrics.

Hafnium zirconium silicon oxide ((HfZrO₄)1-(SiO₂)) materials were investigated through the defect analysis and reliability characterization for next generation high- dielectric. Silicate doped hafnium zirconium oxide (HfZrO) films showed a reduction of negative flat-band voltage () shift compared to pure HfZrO₄. This result was caused by a decrease in donor-like interface traps (Dit) and positive border traps (). As the silicon oxide (SiO₂) content increased, the was shifted in the positive direction from -1.23 to -1.10 to -0.91 V and the slope of the capacitance-voltage (C-V) curve increased. The nonparallel shift of the C-V characteristics was affected by the , while the was responsible for the parallel C-V curve shift. The values of reduced from 4.3 × 10, 3.5 × 10, and 3.0 × 10 cmeV, as well as the values of were decreased from 5.24, 3.90 to 2.26 × 10 cm. Finally, reduction of defects in the HfZrO₄-base film with an addition of SiO₂ affected the gate oxide reliability characteristics, such as gate leakage current (), bias temperature stress instability (BTSI), and time dependent gate dielectric breakdown (TDDB).