用于高效发光二极管的嵌入镍铜纳米颗粒的银基反射器

Ni-Cu Nanoparticles-Embedded Ag-Based Reflector for High-Efficiency Light-Emitting Diodes.

作者信息

Chu Eun-Kyung, Ha Kab, Noh Beom-Rae, Kwon Young-Ju, Oh Semi, Im Jaehyuk, Jang Junhwan, Cho Soohaeng, Kim Kyoung-Kook

机构信息

Department of Advanced Convergence Technology, and Research Institute of Advanced Convergence Technology, Korea Polytechnic University, Siheung, Gyeonggi-do 15073, Korea.

Department of Electrical Engineering and Computer Science, University of Michigan, Ann Arbor, MI 48109, USA.

出版信息

J Nanosci Nanotechnol. 2020 Nov 1;20(11):6732-6737. doi: 10.1166/jnn.2020.18800.

DOI:10.1166/jnn.2020.18800

PMID:32604506

Abstract

We investigated the use of a silver reflector embedded with Ni-Cu nanoparticles to achieve low resistance and high reflectivity in GaN-based flip-chip light-emitting diodes. Compared to a single layer of Ag, the NC-NPs/Ag reflector exhibits a higher light reflectance of ~90% at a wavelength of 450 nm, a lower contact resistance of 4.75 × 10 II cm², and improved thermal stability after annealing at 400°C. The NC-NPs formed after the annealing process prevents agglomeration of the Ag layer, while also reducing the Schottky barrier height between the -GaN layer and metal reflector. The LED fabricated with a NC-NPs/Ag reflector exhibited a forward-bias voltage of 3.13 V and an improvement in light output power of 36.6% (at 20 mA), when compared with the LED composed of a Ag SL. This result indicates that the NC-NPs/Ag reflector is a promising -type reflector for high-intensity light-emitting diodes.

摘要

我们研究了一种嵌入镍铜纳米颗粒的银反射器在基于氮化镓的倒装芯片发光二极管中实现低电阻和高反射率的应用。与单层银相比，NC-NPs/Ag反射器在450nm波长处表现出约90%的更高光反射率、4.75×10⁻²cm²的更低接触电阻以及在400°C退火后改善的热稳定性。退火过程后形成的NC-NPs可防止银层团聚，同时还降低了-GaN层与金属反射器之间的肖特基势垒高度。与由Ag SL组成的发光二极管相比，采用NC-NPs/Ag反射器制造的发光二极管在20mA时的正向偏置电压为3.13V，光输出功率提高了36.6%。该结果表明，NC-NPs/Ag反射器是一种用于高强度发光二极管的有前景的反射器类型。