采用TITO/Ag多层反射器的近红外发光二极管的增强光输出功率

Enhanced Light Output Power on Near-Infrared Light-Emitting Diodes with TITO/Ag Multilayer Reflector.

作者信息

Lee Hyung-Joo, Jang In-Kyu, Kim Dae-Kwang, Cha Yu-Jung, Cho Sung Woon

机构信息

CF Technology Division, AUK Corporation, Iksan 570-210, Jeonbuk, Korea.

Department of Advanced Components and Materials Engineering, Sunchon National University, Sunchon 57922, Jeonnam, Korea.

出版信息

Micromachines (Basel). 2022 Apr 28;13(5):695. doi: 10.3390/mi13050695.

DOI:10.3390/mi13050695

PMID:35630162

原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC9144073/

Abstract

A titanium-indium tin oxide (TITO) multilayer reflector was investigated to improve the light efficiency of high-power, near-infrared, light-emitting diodes (NIR-LEDs). The TITO/Ag was fabricated by combining a patterned TITO and an omnidirectional reflector (ODR). For fabricating a high-power NIR-LED, the wafer bond process required the TITO reflective structure, which has patterns filled by AlAu contact metal, bonded directly to the Ag reflector deposited on the silicon wafer. Among Ag-based single- and multilayer reflectors, the TITO/Ag showed the highest reflectance (R = 96%), which was favorable for wafer-bonded high-power NIR-LEDs. Therefore, the TITO/Ag reflector enabled the production of wafer-bonded NIR-LED chips that exhibit superior output performance (190 mW) compared with conventional cases using a single Ag reflector.

摘要

研究了一种钛铟锡氧化物（TITO）多层反射器，以提高高功率近红外发光二极管（NIR-LED）的光效率。TITO/Ag是通过将图案化的TITO与全向反射器（ODR）相结合制成的。为了制造高功率NIR-LED，晶圆键合工艺要求将具有由AlAu接触金属填充图案的TITO反射结构直接键合到沉积在硅晶圆上的Ag反射器上。在基于Ag的单层和多层反射器中，TITO/Ag表现出最高的反射率（R = 96%），这有利于晶圆键合的高功率NIR-LED。因此，与使用单个Ag反射器的传统情况相比，TITO/Ag反射器能够生产出具有卓越输出性能（190 mW）的晶圆键合NIR-LED芯片。