Xu Xilong, Ma Yandong, Zhang Ting, Lei Chengan, Huang Baibiao, Dai Ying
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan, Shandong 250100, China.
Nanoscale Horiz. 2020 Oct 1;5(10):1386-1393. doi: 10.1039/d0nh00362j. Epub 2020 Jul 13.
Two-dimensional multiferroics, simultaneously harboring antiferromagneticity and ferroelasticity, are essential and highly sought for miniaturized device applications, such as high-density data storage, but thus far they have rarely been explored. Herein, using first principles calculations, we identified two-dimensional antiferromagnetic ferroelasticity in an AgF monolayer that is dynamically and thermally stable, and can be easily fabricated from its bulk. The AgF monolayer is an antiferromagnetic semiconductor with large spin polarization, and with great structural distortion due to its intrinsic Jahn-Teller effect when thinning the AgF down to a monolayer. Additionally, it features excellent ferroelasticity with high transition signal and a low switching barrier, rendering the room-temperature nonvolatile memory accessible. Such coexistence of antiferromagneticity and ferroelasticity is of great significance to the study of two-dimensional multiferroics and also renders the AgF monolayer a promising platform for future multifunctional device applications.
二维多铁性材料同时具有反铁磁性和铁弹性，对于诸如高密度数据存储等小型化器件应用至关重要且备受追捧，但迄今为止它们很少被研究。在此，我们使用第一性原理计算，在AgF单层中识别出二维反铁磁铁弹性，该单层具有动态和热稳定性，并且可以很容易地从其体材料制备而成。AgF单层是一种具有大自旋极化的反铁磁半导体，当将AgF减薄至单层时，由于其固有的 Jahn-Teller 效应而具有很大的结构畸变。此外，它具有优异的铁弹性，具有高转变信号和低开关势垒，使得室温非易失性存储器成为可能。这种反铁磁性和铁弹性的共存对于二维多铁性材料的研究具有重要意义，也使AgF单层成为未来多功能器件应用的有前途的平台。
