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在生长光照条件下,拟南芥的气孔孔径能够补偿气孔密度的改变。

Stomatal aperture can compensate altered stomatal density in Arabidopsis thaliana at growth light conditions.

作者信息

Büssis Dirk, von Groll Uritza, Fisahn Joachim, Altmann Thomas

机构信息

Institute of Biochemistry and Biology - Genetics, University of Potsdam, D-14415 Potsdam, Germany.

Max-Planck-Institute of Molecular Plant Physiology, Am Mühlenberg 1, D-14476 Golm, Germany.

出版信息

Funct Plant Biol. 2006 Nov;33(11):1037-1043. doi: 10.1071/FP06078.

Abstract

Stomatal density of transgenic Arabidopsis thaliana plants over-expressing the SDD1 (stomatal density and distribution) gene was reduced to 40% and in the sdd1-1 mutant increased to 300% of the wild type. CO assimilation rate and stomatal conductance of over-expressers and the sdd1-1 mutant were unchanged compared with wild types when measured under the light conditions the plants were exposed to during growth. Lower stomatal density was compensated for by increased stomatal aperture and conversely, increased stomatal density was compensated for by reduced stomatal aperture. At high light intensities the assimilation rates and stomatal conductance of SDD1 over-expressers were reduced to 80% of those in wild type plants. Areas beneath stomata and patches lacking stomata were analysed separately. In areas without stomata, maximum fluorescence yield (F / F) and quantum yield of photosystem II (Φ PSII) were significantly lower than in areas beneath stomata. In areas beneath stomata, F / F and Φ PSII were identical to levels measured in wild type leaves. At high light intensities over-expressers showed decreased photochemical quenching (qP) compared with wild types. However, the decrease of qP was significantly stronger in areas without stomata than in mesophyll areas beneath stomata. At high CO partial pressures and high light intensities CO assimilation rates of SDD1 over-expressers did not reach wild type levels. These results indicate that photosynthesis in SDD1 over-expressers was reduced because of limiting CO in areas furthest from stomata at high light.

摘要

过表达SDD1(气孔密度和分布)基因的转基因拟南芥植株的气孔密度降低至野生型的40%,而在sdd1-1突变体中则增加到野生型的300%。在植株生长期间所暴露的光照条件下进行测量时,过表达植株和sdd1-1突变体的CO2同化率和气孔导度与野生型相比没有变化。较低的气孔密度通过增加气孔孔径得到补偿,反之,较高的气孔密度则通过减小气孔孔径得到补偿。在高光强下,SDD1过表达植株的同化率和气孔导度降低至野生型植株的80%。分别对气孔下方区域和无气孔斑块进行了分析。在无气孔区域,最大荧光产量(Fv/Fm)和光系统II的量子产量(ΦPSII)显著低于气孔下方区域。在气孔下方区域,Fv/Fm和ΦPSII与野生型叶片中测得的水平相同。在高光强下,与野生型相比,过表达植株的光化学猝灭(qP)降低。然而,无气孔区域qP的降低明显强于气孔下方的叶肉区域。在高CO2分压和高光强下,SDD1过表达植株的CO2同化率未达到野生型水平。这些结果表明,由于在高光强下距离气孔最远的区域CO2受限,SDD1过表达植株的光合作用降低。

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