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导致高熵钠离子导体的聚阴离子晶格修饰:可及组成的数学解

Polyanionic Lattice Modifications Leading to High-Entropy Sodium Ion Conductors: Mathematical Solution of Accessible Compositions.

作者信息

Tietz Frank, Fronia Carsten

机构信息

Institut für Energie- und Klimaforschung, IEK-1: Materials Synthesis and Processing, Institut für Energie- und Klimaforschung, IEK-12: Helmholtz-Institute Münster, Forschungszentrum Jülich GmbH, 52425, Jülich, Germany.

Pi-Counter Unternehmensberatung Carsten Fronia, Bartold-Knaust-Str. 2, 30459, Hannover, Germany.

出版信息

Chemphyschem. 2020 Sep 15;21(18):2096-2103. doi: 10.1002/cphc.202000566. Epub 2020 Aug 26.

DOI:10.1002/cphc.202000566
PMID:32705764
原文链接:https://pmc.ncbi.nlm.nih.gov/articles/PMC7540318/
Abstract

Sodium zirconium double phosphate NaZr (PO ) can be used as a starting point for investigations of high-entropy materials. Apart from the frequently used approach of partial substitution with four or more different transition metal cations, this class of materials also allows multiple substitutions of the phosphate groups. Herein modifications of the polyanionic lattice are considered and high-entropy compositions are numerically determined with up to eight elements on the central tetrahedral lattice site of the so-called NaSICON structure. For this study, the chemical formula was fixed as Na Zr (EO ) with E=B, Al, Si, P, As, Sb, S, Se and Te. The number of compositions increases exponentially with the increasing number of elements involved and with decreasing equal step size for each element. The maximum number of 237258 compositions is found for Na Zr ([B,Al,Si,P,As,Sb,S,Se]O ) with a step size of 0.1 mol/formula unit. Of this compositional landscape, 143744 compositions fulfil the definitions of high-entropy materials. The highest entropy factor of ΔS /R=-2.0405 is attributed to the compositions Na Zr (B Al Si P As Sb S Se )O and Na Zr (B Al Si P As Sb S Se )O .

摘要

双磷酸锆钠NaZr(PO₄)₂可作为高熵材料研究的起点。除了常用的用四种或更多不同过渡金属阳离子进行部分取代的方法外,这类材料还允许对磷酸基团进行多次取代。本文考虑了聚阴离子晶格的修饰,并在所谓的NaSICON结构的中心四面体晶格位点上用多达八种元素数值确定了高熵组成。在本研究中,化学式固定为NaₓZr(EO₄)₂,其中E = B、Al、Si、P、As、Sb、S、Se和Te。随着所涉及元素数量的增加以及每种元素等步长的减小,组成的数量呈指数增加。对于步长为0.1 mol/化学式单位的NaₓZr([B,Al,Si,P,As,Sb,S,Se]O₄)₂,发现最大组成数量为237258种。在这一组成范围内,有143744种组成符合高熵材料的定义。熵因子ΔS/R = -2.0405最高的是组成NaₓZr(B₀.₁Al₀.₁Si₀.₁P₀.₁As₀.₁Sb₀.₁S₀.₁Se₀.₁)O₄和NaₓZr(B₀.₂Al₀.₂Si₀.₂P₀.₂As₀.₂Sb₀.₂S₀.₂Se₀.₂)O₄。

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本文引用的文献

1
High-Entropy Oxides: Fundamental Aspects and Electrochemical Properties.高熵氧化物:基本原理与电化学性质
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