Shen Hongyang, Liu Fengxiang, Liu Chunyang, Zeng Dong, Guo Banghong, Wei Zhongchao, Wang Faqiang, Tan Chunhua, Huang Xuguang, Meng Hongyun
Guangdong Provincial Key Laboratory of Nanophotonic Functional Materials and Devices, School of Information and Optoelectronic Science and Engineering, South China Normal University, Guangzhou 510006, China.
Nanomaterials (Basel). 2020 Jul 19;10(7):1410. doi: 10.3390/nano10071410.
A broadband terahertz (THz) absorber, based on a graphene metasurface, which consists of a layer of ring-porous patterned structure array and a metallic mirror separated by an ultrathin SiO dielectric layer, is proposed and studied by numerical simulation. The simulated results show that the absorptivity of the absorber reaches 90% in the range of 0.91-1.86 THz, and the normalized bandwidth of the absorptivity is 68.6% under normal incidence. In the simulation, the effects of the geometric parameters of the structure on the absorption band have been investigated. The results show that the absorber is insensitive to the incident polarization angle for both transverse electric (TE) and transverse magnetic (TM) under normal incidence. In addition, the absorber is not sensitive to oblique incidence of the light source under TE polarization conditions, and has an approximately stable absorption bandwidth at the incident angle from 0° to 50°. The absorption band can be adjusted by changing the bias voltage of the graphene Fermi level without varying the nanostructure. Furthermore, we propose that a two-layer graphene structure with the same geometric parameters is separated by a dielectric layer of appropriate thickness. The simulated results show that the absorptivity of the two-layer absorber reaches 90% in the range of 0.83-2.04 THz and the normalized bandwidth of the absorptivity is 84.3% under normal incidence. Because of its excellent characteristics based on graphene metamaterial absorbers, it has an important application value in the field of subwavelength photonic devices.
提出了一种基于石墨烯超表面的宽带太赫兹(THz)吸收器,该吸收器由一层环形多孔图案结构阵列和一个通过超薄SiO介电层与金属镜分隔的结构组成,并通过数值模拟进行了研究。模拟结果表明,该吸收器在0.91 - 1.86 THz范围内的吸收率达到90%,在垂直入射下吸收率的归一化带宽为68.6%。在模拟中,研究了结构的几何参数对吸收带的影响。结果表明,该吸收器在垂直入射下对横向电场(TE)和横向磁场(TM)的入射偏振角均不敏感。此外,在TE偏振条件下,该吸收器对光源的斜入射不敏感,在0°至50°的入射角范围内具有近似稳定的吸收带宽。通过改变石墨烯费米能级的偏置电压可以调节吸收带,而无需改变纳米结构。此外,我们提出了一种具有相同几何参数的双层石墨烯结构,中间由适当厚度的介电层分隔。模拟结果表明,双层吸收器在0.83 - 2.04 THz范围内的吸收率达到90%,在垂直入射下吸收率的归一化带宽为84.3%。基于石墨烯超材料吸收器的优异特性,它在亚波长光子器件领域具有重要的应用价值。