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基于硅光子学平台上的非对称定向耦合器和片上偏振器的高消光比偏振分束器。

High-extinction ratio polarization splitter based on an asymmetric directional coupler and on-chip polarizers on a silicon photonics platform.

作者信息

Zafar Humaira, Flores Raquel, Janeiro Ricardo, Khilo Anatol, Dahlem Marcus S, Viegas Jaime

出版信息

Opt Express. 2020 Jul 20;28(15):22899-22907. doi: 10.1364/OE.396505.

Abstract

A high performance compact silicon photonics polarization splitter is proposed and demonstrated. The splitter is based on an asymmetric directional coupler. High extinction ratios at the through and drop ports of the polarization splitter are achieved by using an on-chip TE-pass polarizer and a TM-pass polarizer, respectively. The splitter, implemented on a silicon-on-insulator platform with a 220 nm-thick silicon device layer, has a measured insertion loss lower than 1 dB (for both TE and TM modes) and extinction ratio greater than 25 dB (for TM mode) and greater than 36 dB (for TE mode), in the wavelength range from 1.5 µm to 1.6 µm. The footprint of the device is 12 µm × 15 µm.

摘要

提出并演示了一种高性能紧凑型硅光子偏振分束器。该分束器基于非对称定向耦合器。通过分别使用片上TE传输偏振器和TM传输偏振器,在偏振分束器的直通端口和下路端口实现了高消光比。该分束器在具有220nm厚硅器件层的绝缘体上硅平台上实现,在1.5μm至1.6μm波长范围内,测得的插入损耗低于1dB(TE和TM模式均如此),消光比大于25dB(TM模式)且大于36dB(TE模式)。该器件的占地面积为12μm×15μm。

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