Tang Xiao, Shang Jing, Ma Yandong, Gu Yuantong, Chen Changfeng, Kou Liangzhi
School of Mechanical, Medical and Process Engineering, Queensland University of Technology, Brisbane, QLD 4001, Australia.
School of Physics, State Key Laboratory of Crystal Materials, Shandong University, Jinan 250100, China.
ACS Appl Mater Interfaces. 2020 Sep 2;12(35):39561-39566. doi: 10.1021/acsami.0c09247. Epub 2020 Aug 21.
Electric field tuning of magnetism is highly desirable for nanoelectronics, but volatility in electron spin manipulation presents a major challenge that needs urgent resolution. Here, we show by first-principles calculations that magnetism of metal porphyrazine (MPz) molecules can be effectively tuned by switching ferroelectric polarization of an adjacent InSe monolayer. The magnetic moments of TiPz and VPz (MnPz, FePz, and CoPz) decrease (increase) at one polarization but remain unchanged at reversed polarization. This intriguing phenomenon stems from distinct metal d-orbital occupation caused by electron transfer and energy-level shift associated with the polarization switch of the InSe monolayer. Moreover, the ferroelectric switch also tunes the underlying electronic properties, producing a metallic, half-metallic, or semiconducting state depending on polarization. These findings of robust ferroelectric tuning of magnetism and related electronic properties in MPz-adsorbed InSe hold great promise for innovative design and implementation in advanced magnetic memory storage, sensor, and spintronic devices.
电场对磁性的调控在纳米电子学中极具吸引力,但电子自旋操控的波动性带来了亟待解决的重大挑战。在此,我们通过第一性原理计算表明,金属卟啉(MPz)分子的磁性可通过切换相邻InSe单层的铁电极化来有效调控。TiPz和VPz(MnPz、FePz和CoPz)的磁矩在一种极化状态下减小(增大),而在相反极化状态下保持不变。这一有趣现象源于与InSe单层极化切换相关的电子转移和能级移动所导致的不同金属d轨道占据情况。此外,铁电开关还能调控底层电子性质,根据极化情况产生金属态、半金属态或半导体态。这些在MPz吸附的InSe中实现的对磁性和相关电子性质的稳健铁电调控的发现,为先进磁存储、传感器和自旋电子器件的创新设计与应用带来了巨大希望。