Cho Sung Joon, Kim Min Je, Wu Ziang, Son Jae Hoon, Jeong Sang Young, Lee Sungjoo, Cho Jeong Ho, Woo Han Young
Department of Chemistry, Korea University, Seoul 136-713, Republic of Korea.
Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea.
ACS Appl Mater Interfaces. 2020 Sep 16;12(37):41842-41851. doi: 10.1021/acsami.0c11561. Epub 2020 Sep 3.
In this study, we synthesize four different kinds of bis(alkylsulfanyl)methylene-substituted 4,9-dihydro--indaceno[1,2-:5,6-']dithiophene (IDT)-based acceptor-donor-acceptor (A-D-A) type small molecules (IDSIC, IDSIC-4F, IDSIC-4Cl, and IDSTIC) by incorporating electron-withdrawing halogen atoms or electron-releasing thiophene spacers. Herein, enhanced structural planarity and crystalline intermolecular packing are induced by the sp-hybridized C═C double bond side chains and sulfur-sulfur chalcogen interactions. The fine control of intramolecular charge transfer modulates the electrochemical characteristics and the resulting carrier polarity in organic field-effect transistors (OFETs). Well-balanced ambipolar, n-dominant, and p-dominant charge transport properties are successfully demonstrated in OFETs by modulating the electron-donating or withdrawing strength based on the A-D-A structural motif, resulting in hole/electron mobilities of 0.599/0.553, 0.003/0.019, 0.092/0.897, and 0.683/0.103 cm/V·s for IDSIC, IDSIC-4F, IDSIC-4Cl, and IDSTIC respectively, after thermal annealing at 200 °C. Thermal annealing of the as-cast films improves the intermolecular packing in an edge-on fashion, which is investigated in detail by grazing incidence X-ray scattering. Finally, complementary logic circuits, i.e., NOT, NAND, and NOR, are fabricated by assembling p-dominant IDSTIC and n-dominant IDSIC-4Cl OFETs. Therefore, a simple and efficient molecular design strategy for fine tuning the charge polarity and charge transport properties of OFET devices is presented.
在本研究中,我们通过引入吸电子卤素原子或供电子噻吩间隔基,合成了四种不同的双(烷基硫烷基)亚甲基取代的基于4,9-二氢茚并[1,2 - :5,6 - ']二噻吩(IDT)的受体-供体-受体(A-D-A)型小分子(IDSIC、IDSIC-4F、IDSIC-4Cl和IDSTIC)。在此,sp杂化的C═C双键侧链和硫-硫族元素相互作用诱导了增强的结构平面性和晶体分子间堆积。分子内电荷转移的精细控制调节了有机场效应晶体管(OFET)中的电化学特性和由此产生的载流子极性。通过基于A-D-A结构 motif调节供电子或吸电子强度,在OFET中成功展示了平衡的双极性、n主导和p主导的电荷传输特性,在200°C热退火后,IDSIC、IDSIC-4F、IDSIC-4Cl和IDSTIC的空穴/电子迁移率分别为0.599/0.553、0.003/0.019、0.092/0.897和0.683/0.103 cm²/V·s。铸膜的热退火以边对边的方式改善了分子间堆积,通过掠入射X射线散射对此进行了详细研究。最后,通过组装p主导的IDSTIC和n主导的IDSIC-4Cl OFET制造了互补逻辑电路,即非门、与非门和或非门。因此,提出了一种简单有效的分子设计策略,用于微调OFET器件的电荷极性和电荷传输特性。