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具有双(烷基硫烷基)亚甲基取代基的A-D-A型半导体小分子及其对有机场效应晶体管电荷极性的控制

A-D-A Type Semiconducting Small Molecules with Bis(alkylsulfanyl)methylene Substituents and Control of Charge Polarity for Organic Field-Effect Transistors.

作者信息

Cho Sung Joon, Kim Min Je, Wu Ziang, Son Jae Hoon, Jeong Sang Young, Lee Sungjoo, Cho Jeong Ho, Woo Han Young

机构信息

Department of Chemistry, Korea University, Seoul 136-713, Republic of Korea.

Department of Chemical and Biomolecular Engineering, Yonsei University, Seoul 03722, Republic of Korea.

出版信息

ACS Appl Mater Interfaces. 2020 Sep 16;12(37):41842-41851. doi: 10.1021/acsami.0c11561. Epub 2020 Sep 3.

Abstract

In this study, we synthesize four different kinds of bis(alkylsulfanyl)methylene-substituted 4,9-dihydro--indaceno[1,2-:5,6-']dithiophene (IDT)-based acceptor-donor-acceptor (A-D-A) type small molecules (IDSIC, IDSIC-4F, IDSIC-4Cl, and IDSTIC) by incorporating electron-withdrawing halogen atoms or electron-releasing thiophene spacers. Herein, enhanced structural planarity and crystalline intermolecular packing are induced by the sp-hybridized C═C double bond side chains and sulfur-sulfur chalcogen interactions. The fine control of intramolecular charge transfer modulates the electrochemical characteristics and the resulting carrier polarity in organic field-effect transistors (OFETs). Well-balanced ambipolar, n-dominant, and p-dominant charge transport properties are successfully demonstrated in OFETs by modulating the electron-donating or withdrawing strength based on the A-D-A structural motif, resulting in hole/electron mobilities of 0.599/0.553, 0.003/0.019, 0.092/0.897, and 0.683/0.103 cm/V·s for IDSIC, IDSIC-4F, IDSIC-4Cl, and IDSTIC respectively, after thermal annealing at 200 °C. Thermal annealing of the as-cast films improves the intermolecular packing in an edge-on fashion, which is investigated in detail by grazing incidence X-ray scattering. Finally, complementary logic circuits, i.e., NOT, NAND, and NOR, are fabricated by assembling p-dominant IDSTIC and n-dominant IDSIC-4Cl OFETs. Therefore, a simple and efficient molecular design strategy for fine tuning the charge polarity and charge transport properties of OFET devices is presented.

摘要

在本研究中,我们通过引入吸电子卤素原子或供电子噻吩间隔基,合成了四种不同的双(烷基硫烷基)亚甲基取代的基于4,9-二氢茚并[1,2 - :5,6 - ']二噻吩(IDT)的受体-供体-受体(A-D-A)型小分子(IDSIC、IDSIC-4F、IDSIC-4Cl和IDSTIC)。在此,sp杂化的C═C双键侧链和硫-硫族元素相互作用诱导了增强的结构平面性和晶体分子间堆积。分子内电荷转移的精细控制调节了有机场效应晶体管(OFET)中的电化学特性和由此产生的载流子极性。通过基于A-D-A结构 motif调节供电子或吸电子强度,在OFET中成功展示了平衡的双极性、n主导和p主导的电荷传输特性,在200°C热退火后,IDSIC、IDSIC-4F、IDSIC-4Cl和IDSTIC的空穴/电子迁移率分别为0.599/0.553、0.003/0.019、0.092/0.897和0.683/0.103 cm²/V·s。铸膜的热退火以边对边的方式改善了分子间堆积,通过掠入射X射线散射对此进行了详细研究。最后,通过组装p主导的IDSTIC和n主导的IDSIC-4Cl OFET制造了互补逻辑电路,即非门、与非门和或非门。因此,提出了一种简单有效的分子设计策略,用于微调OFET器件的电荷极性和电荷传输特性。

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