Insights into the Proton Transport Mechanism in TiO Simple Oxides by Raman Spectroscopy.

Understanding the mechanisms of proton conduction at the interface of materials enables the development of a new generation of protonic ceramic conductors at low temperatures (<150 °C) through water absorption and proton transport on the surface and grain boundaries. Conductivity measurements under Ar-3% HO and Ar-3% DO revealed a σ(HO)/σ(DO) ratio of approximately 2, indicating a hopping-based mechanism for proton conduction at the interface. Raman spectroscopy was performed on water-saturated, porous, and nanostructured TiO membranes to directly observe the isotope exchange reactions over the temperature range of 25 to 175 °C. The behavior of the isotope exchange reactions suggested a Grotthuss-type proton transport and faster isotope exchange reactions at 175 °C than that at 25 °C with a corresponding activation energy of 9 kJ mol. The quantitative and mechanistic kinetic description of the isotope exchange process via Raman spectroscopy represents a significant advance toward understanding proton transport mechanisms and aids in the development of high-performance proton conductors with rapid surface exchange coefficients of importance to contemporary energy conversion and storage material development. In addition, new material systems are proposed, which combine interface and bulk effects at low temperatures (<150 °C), resulting in enhanced proton transport through interfacial engineering at the nanoscale.