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在低压空气和 O 中用辉光放电等离子体处理淀粉薄膜。

Treatment of starch films with a glow discharge plasma in air and O at low pressure.

机构信息

Students' Research Committee, National Nutrition, and Food Technology Research Institute, Faculty of Nutrition Sciences and Food Technology, Shahid Beheshti University of Medical Sciences, Tehran, Iran.

Department of Food Science and Technology, National Nutrition and Food Technology Research Institute, Faculty of Nutrition Sciences and Food Technology, Shahid Beheshti University of Medical Sciences, Tehran, Iran.

出版信息

Food Sci Technol Int. 2021 Apr;27(3):276-285. doi: 10.1177/1082013220948641. Epub 2020 Aug 27.

DOI:10.1177/1082013220948641
PMID:32854540
Abstract

In this study, the effect of different cold plasma treatments was investigated as a novel method for the modification of starch film properties. The films were prepared from wheat starch using a solvent casting method and then treated with air and O glow discharge plasma at different durations (4, 8, and 12 min). A significant increase in the hydrophilicity of the films was observed due to the formation of oxygen-containing groups after plasma treatment. Fourier transform infrared analysis illustrated a decrease in C-H groups that caused an increase in C-O and C-O-C groups in air-treated films and carbonyl groups in O-treated films. The surface roughness of the treated films increased from 17.6 nm to 22.5 and 20.6 nm after air and O treatments, respectively. Plasma treatments decreased oxygen permeability of the films but no significant difference in the water vapor permeability was observed. After plasma treatment, tensile strength of films was improved due to crosslinking and etching at the surface, although elongation at break remains unchanged.

摘要

本研究旨在探索不同冷等离子体处理方法对淀粉膜性能的修饰作用。采用溶剂浇铸法从小麦淀粉中制备薄膜,然后分别用空气和 O 辉光放电等离子体在不同时间(4、8 和 12 分钟)下处理。由于等离子体处理后形成了含氧基团,薄膜的亲水性显著提高。傅里叶变换红外分析表明,C-H 基团减少,导致空气处理的薄膜中 C-O 和 C-O-C 基团增加,O 处理的薄膜中形成羰基基团。经空气和 O 处理后,处理过的薄膜的表面粗糙度分别从 17.6nm 增加到 22.5nm 和 20.6nm。等离子体处理降低了薄膜的氧气透过率,但水蒸气透过率没有明显差异。等离子体处理后,由于表面的交联和蚀刻,薄膜的拉伸强度得到提高,尽管断裂伸长率保持不变。

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