Szlawska Maria, Gnida Daniel, Ruszała Piotr, Winiarski Maciej J, Samsel-Czekała Małgorzata, Schmidt Marcus, Grin Yuri, Kaczorowski Dariusz
Institute of Low Temperature and Structure Research, Polish Academy of Sciences, 50-950 Wrocław, Poland.
Max-Planck-Institut für Chemische Physik Fester Stoffe, 01187 Dresden, Germany.
Materials (Basel). 2020 Sep 1;13(17):3865. doi: 10.3390/ma13173865.
Single crystals of the ternary cerium arsenide CeAgAs were grown by chemical vapor transport. They were studied by means of x-ray diffraction, magnetization, heat capacity and electrical transport measurements. The experimental research was supplemented with electronic band structure calculations. The compound was confirmed to order antiferromagnetically at the Néel temperature of 4.9 K and to undergo metamagnetic transition in a field of 0.5 T at 1.72 K. The electrical resistivity shows distinct increase at low temperatures, which origin is discussed in terms of pseudo-gap formation in the density of states at the Fermi level and quantum corrections to the resistivity in the presence of atom disorder due to crystal structure imperfections.
通过化学气相传输法生长出了三元砷化铈CeAgAs的单晶。利用X射线衍射、磁化强度、热容量和电输运测量等手段对其进行了研究。实验研究辅以电子能带结构计算。该化合物在4.9 K的奈尔温度下被证实为反铁磁有序,并在1.72 K的0.5 T磁场中发生变磁转变。电阻率在低温下呈现出明显增加,其起源根据费米能级处态密度中的赝能隙形成以及由于晶体结构缺陷导致的原子无序存在时电阻率的量子修正来进行讨论。