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稀磁Ising反铁磁体FeZnF中的随机场和表观交换偏置

Random fields and apparent exchange bias in the dilute Ising antiferromagnet FeZnF.

作者信息

Joshi D C, Nordblad P, Mathieu R

机构信息

Department of Materials Science and Engineering, Uppsala University, Box 35, 751 03, Uppsala, Sweden.

出版信息

Sci Rep. 2020 Sep 3;10(1):14588. doi: 10.1038/s41598-020-71533-6.

Abstract

Random field induced spontaneous excess moments appear in field cooled single crystals of diluted Ising antiferromagnets. Here we report results from low temperature measurements of field cooled (including zero field) magnetic hysteresis loops parallel and perpendicular to the c-axis of a single crystal of composition FeZnF. We find that weak static ferromagnetic excess moments attained on field cooling give rise to an apparent exchange bias of the magnetic hysteresis loops, whose magnitude is controlled by temperature and the strength and direction of the cooling field. Random field induced temporal excess moments only become observable in cooling fields larger than 1 T applied along the c-axis direction of the FeZnF single crystal.

摘要

随机场诱导的自发过剩矩出现在稀释伊辛反铁磁体的场冷单晶体中。在此,我们报告了对成分 FeZnF 的单晶体沿 c 轴平行和垂直方向的场冷(包括零场)磁滞回线进行低温测量的结果。我们发现,场冷时获得的微弱静态铁磁过剩矩会导致磁滞回线出现明显的交换偏置,其大小由温度以及冷却场的强度和方向控制。仅在沿 FeZnF 单晶体 c 轴方向施加大于 1 T 的冷却场中,随机场诱导的瞬时过剩矩才变得可观测到。

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