Peng Cong, Dong Panpan, Li Xifeng
Key Laboratory of Advanced Display and System Application of Ministry of Education, Shanghai University, Shanghai, People's Republic of China.
Nanotechnology. 2021 Jan 8;32(2):025207. doi: 10.1088/1361-6528/abbc25.
In this letter, the performance of Zn-Sn-O (ZTO) thin film transistors (TFTs) has been greatly improved by Mo doping as an oxygen vacancy to control the residual electrons. The results show that the TFT with 3 at% Mo doping exhibits the best electrical characteristics with a high saturation mobility of 26.53 cm V s, a threshold voltage of 0.18 V, a subthreshold swing of 0.32 V dec and a large switching ratio of 2 × 10. The saturation mobility and switching ratio of Mo-doped Zn-Sn-O (MZTO, 3 at%) TFTs improved almost five and two orders of magnitude compared with ZTO TFTs, respectively. Therefore, the MZTO TFT has much potential for future electrical applications with its excellent properties.
在这封信中，通过掺杂钼作为氧空位来控制残余电子，Zn-Sn-O（ZTO）薄膜晶体管（TFT）的性能得到了极大改善。结果表明，掺杂3at%钼的TFT表现出最佳的电学特性，具有26.53 cm² V⁻¹ s⁻¹的高饱和迁移率、0.18 V的阈值电压、0.32 V dec⁻¹的亚阈值摆幅和2×10⁷的大开关比。与ZTO TFT相比，掺杂钼的Zn-Sn-O（MZTO，3at%）TFT的饱和迁移率和开关比分别提高了近五个和两个数量级。因此，MZTO TFT凭借其优异的性能在未来的电气应用中具有很大的潜力。
