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室温离子液体中钴电沉积高过电位的起源

Origin of a High Overpotential of Co Electrodeposition in a Room-Temperature Ionic Liquid.

作者信息

Motobayashi Kenta, Shibamura Yuhei, Ikeda Katsuyoshi

机构信息

Department of Physical Science and Engineering, Nagoya Institute of Technology, Nagoya 466-8555, Japan.

Frontier Research Institute for Materials Science (FRIMS), Nagoya Institute of Technology, Nagoya 466-8555, Japan.

出版信息

J Phys Chem Lett. 2020 Oct 15;11(20):8697-8702. doi: 10.1021/acs.jpclett.0c02605. Epub 2020 Sep 29.

Abstract

Metal electrodeposition in room-temperature ionic liquids (RTILs) often shows high overpotentials. Although this is often explained by the formation of a negatively charged metal complex due to the coordination of RTIL anions and the hindrance of its close approach onto the negatively charged electrode, we propose an alternative model based upon surface-enhanced infrared absorption spectroscopy measurements under Co electrodeposition. We found that the anionic first layer exists on the negatively charged electrode, and its replacement with a cationic one and Co electrodeposition both begin at an identical onset potential. The correlation between the interfacial structure and the electrodeposition reaction that can be modified by additives indicated that the high overpotential can be mainly attributed to the restructuring of the characteristic interfacial multilayer structure stabilized by its charge order, which is required for the reorganization of solvent ions after the reduction of Co.

摘要

金属在室温离子液体(RTILs)中的电沉积通常表现出高过电位。尽管这通常被解释为由于RTIL阴离子的配位作用形成带负电的金属络合物以及其靠近带负电电极时的阻碍,但我们基于钴电沉积过程中的表面增强红外吸收光谱测量结果提出了一种替代模型。我们发现带负电的电极上存在阴离子第一层,用阳离子层替代它以及钴的电沉积都在相同的起始电位开始。可被添加剂改变的界面结构与电沉积反应之间的相关性表明,高过电位主要可归因于由其电荷顺序稳定的特征界面多层结构的重构,这是钴还原后溶剂离子重新排列所必需的。

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