Karunathilaka Buddhika S B, Balijapalli Umamahesh, Senevirathne Chathuranganie A M, Yoshida Seiya, Esaki Yu, Goushi Kenichi, Matsushima Toshinori, Sandanayaka Atula S D, Adachi Chihaya
Center for Organic Photonics and Electronics Research (OPERA), Kyushu University, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan.
Education Center for Global Leaders in Molecular System for Devices, Kyushu University, 744 Motooka, Nishi, Fukuoka, 819-0395, Japan.
Nat Commun. 2020 Oct 1;11(1):4926. doi: 10.1038/s41467-020-18292-0.
Large external quantum efficiency rolloff at high current densities in organic light-emitting diodes (OLEDs) is frequently caused by the quenching of radiative singlet excitons by long-lived triplet excitons [singlet-triplet annihilation (STA)]. In this study, we adopted a triplet scavenging strategy to overcome the aforementioned STA issue. To construct a model system for the triplet scavenging, we selected 2,6-dicyano-1,1-diphenyl-λσ-phosphinine (DCNP) as the emitter and 4,4'-bis[(N-carbazole)styryl]biphenyl (BSBCz) as the host material by considering their singlet and triplet energy levels. In this system, the DCNP's triplets are effectively scavenged by BSBCz while the DCNP's singlets are intact, resulting in the suppressed STA under electrical excitation. Therefore, OLEDs with a 1 wt.%-DCNP-doped BSBCz emitting layer demonstrated the greatly suppressed efficiency rolloff even at higher current densities. This finding favourably provides the advanced light-emitting performance for OLEDs and organic semiconductor laser diodes from the aspect of the suppressed efficiency rolloff.
有机发光二极管(OLED)在高电流密度下出现的大幅外部量子效率滚降现象,通常是由长寿命三重态激子对辐射单重态激子的猝灭作用(单重态-三重态湮灭,即STA)导致的。在本研究中,我们采用了一种三重态清除策略来克服上述STA问题。为构建用于三重态清除的模型体系,我们通过考虑2,6-二氰基-1,1-二苯基-λσ-磷杂环戊二烯(DCNP)和4,4'-双[(N-咔唑)苯乙烯基]联苯(BSBCz)的单重态和三重态能级,选择DCNP作为发光体,BSBCz作为主体材料。在该体系中,BSBCz能有效清除DCNP的三重态,而DCNP的单重态保持完整,从而在电激发下抑制了STA。因此,具有1 wt%-DCNP掺杂BSBCz发光层的OLED即使在更高电流密度下也表现出大幅抑制的效率滚降。这一发现从抑制效率滚降的角度为OLED和有机半导体激光二极管提供了先进的发光性能。