Shirali K, Shelton W A, Vekhter I
Department of Physics and Astronomy, Louisiana State University, Baton Rouge, LA 70803-4001, United States of America.
Cain Department of Chemical Engineering, Louisiana State University, Baton Rouge, LA 70803-4001, United States of America.
J Phys Condens Matter. 2020 Oct 19;33(3). doi: 10.1088/1361-648X/abbdbc.
We investigate the lattice and electronic structures of the bulk and surface of the prototypical layered topological insulators BiSeand BiTeusingdensity functional methods, and systematically compare the results of different methods of including van der Waals (vdW) interactions. We show that the methods utilizing semi-empirical energy corrections yield accurate descriptions of these materials, with the most precise results obtained by properly accounting for the long-range tail of the vdW interactions. The bulk lattice constants, distances between quintuple layers and the Dirac velocity of the topological surface states (TSS) are all in excellent agreement with experiment. In BiTe, hexagonal warping of the energy dispersion leads to complex spin textures of the TSS at moderate energies, while in BiSethese states remain almost perfectly helical away from the Dirac point, showing appreciable signs of hexagonal warping at much higher energies, above the minimum of the bulk conduction band. Our results establish a framework for unified and systematic self-consistent first principles calculations of topological insulators in bulk, slab and interface geometries, and provides the necessary first step towardmodeling of topological heterostructures.
我们使用密度泛函方法研究了典型的层状拓扑绝缘体BiSe和BiTe的体相和表面的晶格结构与电子结构,并系统地比较了包含范德华(vdW)相互作用的不同方法的结果。我们表明,利用半经验能量修正的方法能够对这些材料进行准确描述,通过适当考虑vdW相互作用的长程尾部可获得最精确的结果。体相晶格常数、五元层之间的距离以及拓扑表面态(TSS)的狄拉克速度均与实验结果高度吻合。在BiTe中,能量色散的六角形翘曲导致中等能量下TSS的复杂自旋纹理,而在BiSe中,这些态在远离狄拉克点时几乎保持完美的螺旋性,在远高于体相导带最小值的更高能量处显示出明显的六角形翘曲迹象。我们的结果建立了一个用于对体相、平板和界面几何结构中的拓扑绝缘体进行统一且系统的自洽第一性原理计算的框架,并为拓扑异质结构的建模提供了必要的第一步。