一种基于同轴导电细丝的坚固且低功耗的铋掺杂氧化锡忆阻器。

A Robust and Low-Power Bismuth Doped Tin Oxide Memristor Derived from Coaxial Conductive Filaments.

作者信息

Liu Yanxin, Ye Cong, Chang Kuan-Chang, Li Lei, Jiang Bei, Xia Chen, Liu Lei, Zhang Xin, Liu Xinyi, Xia Tian, Peng Zehui, Cao Guangsen, Cheng Gong, Ke Shanwu, Wang Jiahong

机构信息

Faculty of Physics and Electronic Science, Hubei University, Hubei Key Laboratory of Ferro-& Piezoelectric Materials and Devices, Wuhan, 430062, P. R. China.

School of Electronic and Computer Engineering, Peking University Shenzhen Graduate School, Shenzhen, 518055, P. R. China.

出版信息

Small. 2020 Nov;16(46):e2004619. doi: 10.1002/smll.202004619. Epub 2020 Oct 14.

DOI:10.1002/smll.202004619

PMID:33053256

Abstract

Memristor, processing data storage and logic operation all-in-one, is an advanced configuration for next generation computer. In this work, a bismuth doped tin oxide (Bi:SnO ) memristor with ITO/Bi:SnO /TiN structure has been fabricated. Observing from transmission electron microscope (TEM) for the Bi:SnO device, it is found that the bismuth atoms surround the surface of SnO crystals to form the coaxial Bi conductive filament. The self-compliance current, switching voltage and operating current of Bi:SnO memristor are remarkably smaller than that of ITO/SnO /TiN device. With the content of 4.8% Bi doping, the SET operating power of doped device is 16 µW for ITO/Bi:SnO /TiN memory cell of 0.4 × 0.4 µm , which is cut down by two orders of magnitude. Hence, the findings in this study suggest that Bi:SnO memristors hold significant potential for application in low power memory and broadening the understanding of existing resistive switching (RS) mechanism.

摘要

忆阻器，集数据存储与逻辑运算功能于一体，是下一代计算机的先进配置。在本研究中，制备了具有ITO/Bi:SnO /TiN结构的铋掺杂氧化锡（Bi:SnO ）忆阻器。通过透射电子显微镜（TEM）观察Bi:SnO 器件，发现铋原子环绕SnO 晶体表面形成同轴铋导电细丝。Bi:SnO 忆阻器的自顺应电流、开关电压和工作电流显著小于ITO/SnO /TiN器件。对于0.4×0.4 µm 的ITO/Bi:SnO /TiN存储单元，在铋掺杂含量为4.8%时，掺杂器件的SET工作功率为16 µW，降低了两个数量级。因此，本研究结果表明，Bi:SnO 忆阻器在低功耗存储器应用以及拓展对现有电阻开关（RS）机制的理解方面具有巨大潜力。