Qi Shengmei, Jiang Jiawei, Mi Wenbo
Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.
Phys Chem Chem Phys. 2020 Oct 28;22(41):23597-23608. doi: 10.1039/d0cp03292a.
Two-dimensional (2D) Janus materials are a novel kind of 2D materials, which have potential applications in nanoelectronics, optoelectronics and spintronics. However, a 2D Janus material combined with intrinsic ferromagnetism, electric dipole moment, valley polarization and Dzyaloshinskii-Moriya interaction (DMI) remains rarely reported. Here, the electronic structure and magnetic properties of 2D intrinsic ferromagnetic Janus 2H-VSeX (X = S, Te) monolayers are investigated systematically using the density-functional theory. Janus 2H-VSeX (X = S, Te) monolayers are intrinsic ferromagnetic semiconductors with in-plane magnetic anisotropy (IMA). The valley splitting of Janus 2H-VSeX (X = S, Te) monolayers appears by considering the spin-orbit coupling (SOC) effect and out of plane magnetization. Additionally, spontaneous vertical electric dipole moment and a large DMI are also found in Janus 2H-VSeX (X = S, Te) monolayers due to the broken inversion symmetry. Moreover, the valley splitting and DMI can be significantly increased by applying in-plane biaxial strain. These results provide an interesting 2D intrinsic ferromagnetic Janus material, which has potential applications in spintronic and valleytronic devices.
二维(2D)Janus材料是一类新型的二维材料,在纳米电子学、光电子学和自旋电子学中具有潜在应用。然而,结合本征铁磁性、电偶极矩、能谷极化和Dzyaloshinskii-Moriya相互作用(DMI)的二维Janus材料鲜有报道。在此,利用密度泛函理论系统研究了二维本征铁磁Janus 2H-VSeX(X = S,Te)单层的电子结构和磁性。Janus 2H-VSeX(X = S,Te)单层是具有面内磁各向异性(IMA)的本征铁磁半导体。考虑自旋轨道耦合(SOC)效应和面外磁化时,Janus 2H-VSeX(X = S,Te)单层出现能谷分裂。此外,由于反演对称性破缺,Janus 2H-VSeX(X = S,Te)单层中还发现了自发垂直电偶极矩和大的DMI。而且,施加面内双轴应变可显著增加能谷分裂和DMI。这些结果提供了一种有趣的二维本征铁磁Janus材料,在自旋电子学和能谷电子学器件中具有潜在应用。