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二维本征铁磁Janus 2H-VSeX(X = S,Te)单层中的可调谷极化、磁各向异性和Dzyaloshinskii-Moriya相互作用

Tunable valley polarization, magnetic anisotropy and Dzyaloshinskii-Moriya interaction in two-dimensional intrinsic ferromagnetic Janus 2H-VSeX (X = S, Te) monolayers.

作者信息

Qi Shengmei, Jiang Jiawei, Mi Wenbo

机构信息

Tianjin Key Laboratory of Low Dimensional Materials Physics and Preparation Technology, School of Science, Tianjin University, Tianjin 300354, China.

出版信息

Phys Chem Chem Phys. 2020 Oct 28;22(41):23597-23608. doi: 10.1039/d0cp03292a.

Abstract

Two-dimensional (2D) Janus materials are a novel kind of 2D materials, which have potential applications in nanoelectronics, optoelectronics and spintronics. However, a 2D Janus material combined with intrinsic ferromagnetism, electric dipole moment, valley polarization and Dzyaloshinskii-Moriya interaction (DMI) remains rarely reported. Here, the electronic structure and magnetic properties of 2D intrinsic ferromagnetic Janus 2H-VSeX (X = S, Te) monolayers are investigated systematically using the density-functional theory. Janus 2H-VSeX (X = S, Te) monolayers are intrinsic ferromagnetic semiconductors with in-plane magnetic anisotropy (IMA). The valley splitting of Janus 2H-VSeX (X = S, Te) monolayers appears by considering the spin-orbit coupling (SOC) effect and out of plane magnetization. Additionally, spontaneous vertical electric dipole moment and a large DMI are also found in Janus 2H-VSeX (X = S, Te) monolayers due to the broken inversion symmetry. Moreover, the valley splitting and DMI can be significantly increased by applying in-plane biaxial strain. These results provide an interesting 2D intrinsic ferromagnetic Janus material, which has potential applications in spintronic and valleytronic devices.

摘要

二维(2D)Janus材料是一类新型的二维材料,在纳米电子学、光电子学和自旋电子学中具有潜在应用。然而,结合本征铁磁性、电偶极矩、能谷极化和Dzyaloshinskii-Moriya相互作用(DMI)的二维Janus材料鲜有报道。在此,利用密度泛函理论系统研究了二维本征铁磁Janus 2H-VSeX(X = S,Te)单层的电子结构和磁性。Janus 2H-VSeX(X = S,Te)单层是具有面内磁各向异性(IMA)的本征铁磁半导体。考虑自旋轨道耦合(SOC)效应和面外磁化时,Janus 2H-VSeX(X = S,Te)单层出现能谷分裂。此外,由于反演对称性破缺,Janus 2H-VSeX(X = S,Te)单层中还发现了自发垂直电偶极矩和大的DMI。而且,施加面内双轴应变可显著增加能谷分裂和DMI。这些结果提供了一种有趣的二维本征铁磁Janus材料,在自旋电子学和能谷电子学器件中具有潜在应用。

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