Macková A, Jagerová A, Malinský P, Cutroneo M, Flaks J, Nekvindová P, Michalcová A, Holý V, Košutová T
Nuclear Physics Institute of the Czech Academy of Sciences, v. v. i., 250 68 ŘeŽ, Czech Republic.
Department of Inorganic Chemistry, University of Chemistry and Technology, 166 28 Prague, Czech Republic.
Phys Chem Chem Phys. 2020 Nov 7;22(41):23563-23573. doi: 10.1039/d0cp04119j. Epub 2020 Oct 19.
Noble metal nanoparticles dispersed in semiconductors, mainly in ZnO, have been intensively investigated. Au dispersion and possible precipitation as well as damage growth were studied in ZnO of various orientations, a-plane (112[combining macron]0) and c-plane (0001), using 1 MeV Au-ion implantation with an ion fluence of 1.5 × 10 cm and subsequently annealed at 600 °C in an ambient atmosphere for one hour. Afterwards, irradiation with 10 MeV O at a fluence of 5 × 10 cm was used to modify Au distribution and internal morphology as well as to follow the structural modification of ZnO under high-energy light-ion irradiation. Rutherford backscattering spectrometry in the channelling mode (RBS-C) and Raman spectroscopy show that O irradiation with high electronic energy transfer distinctly modifies the implanted Au layer in various ZnO facets; it introduces additional displacement and disorder in the O sublattice mainly in the a-plane while not creating an additional strain in this facet. This has been confirmed by XRD analysis, identifying the appearance of an additional phase (nanocrystallites) after Au implantation, which diminishes after O irradiation, and RBS-C has identified decreased disorder in the Zn-sublattice. Unlike in c-plane ZnO, it has been possible to observe a local compressive deformation around spherical defects, which is more pronounced after O irradiation simultaneously with the vertical strain introduced in the Au-implanted and annealed layer. Transmission electron microscopy (TEM) with energy dispersive spectroscopy (EDS) was employed to investigate the interior morphology, showing the occurrence of Au-hcp clusters of the small sizes of about 4-10 nm; neither the cluster sizes nor their shapes are significantly affected by the O irradiation.
分散在半导体（主要是氧化锌）中的贵金属纳米颗粒已得到深入研究。使用能量为1 MeV、离子注量为1.5×10¹⁷ cm⁻²的金离子注入不同取向的氧化锌（a面（112̅0）和c面（0001）），研究了金的分散、可能的沉淀以及损伤生长情况，随后在环境气氛中于600℃退火1小时。之后，使用能量为10 MeV、注量为5×10¹⁷ cm⁻²的氧离子进行辐照，以改变金的分布和内部形貌，并跟踪高能轻离子辐照下氧化锌的结构变化。沟道模式卢瑟福背散射光谱（RBS-C）和拉曼光谱表明，具有高电子能量转移的氧辐照显著改变了不同氧化锌晶面中注入的金层；它主要在a面的氧亚晶格中引入了额外的位移和无序，而在该晶面中未产生额外应变。X射线衍射分析证实了这一点，该分析确定了金注入后出现了一个额外相（纳米微晶），氧辐照后该相减少，RBS-C确定了锌亚晶格中的无序度降低。与c面氧化锌不同，在球形缺陷周围有可能观察到局部压缩变形，在氧辐照后这种变形更明显，同时在金注入和退火层中引入了垂直应变。采用带有能量色散光谱（EDS）的透射电子显微镜（TEM）来研究内部形貌，结果显示出现了尺寸约为4 - 10 nm的小金六方密堆积簇；氧辐照对簇的尺寸和形状均无显著影响。
