Paredes Ingrid J, Beck Clara, Lee Scott, Chen Shuzhen, Khwaja Mersal, Scimeca Michael R, Li Shuang, Hwang Sooyeon, Lian Zhen, McPeak Kevin M, Shi Su-Fei, Sahu Ayaskanta
Department of Chemical and Biomolecular Engineering, New York University, Brooklyn, NY 11201, USA.
Optical Materials Engineering Laboratory, ETH Zurich, 8092 Zurich, Switzerland.
Nanoscale. 2020 Oct 22;12(40):20952-20964. doi: 10.1039/d0nr06665f.
Metal chalcogenide nanoparticles offer vast control over their optoelectronic properties via size, shape, composition, and morphology which has led to their use across fields including optoelectronics, energy storage, and catalysis. While cadmium and lead-based nanocrystals are prevalent in applications, concerns over their toxicity have motivated researchers to explore alternate classes of nanomaterials based on environmentally benign metals such as zinc and tin. The goal of this research is to identify material systems that offer comparable performance to existing metal chalcogenide systems from abundant, recyclable, and environmentally benign materials. With band gaps that span the visible through the infrared, II-V direct band gap semiconductors such as tetragonal zinc phosphide (α-Zn3P2) are promising candidates for optoelectronics. To date, syntheses of α-Zn3P2 nanoparticles have been hindered because of the toxicity of zinc and phosphorus precursors, surface oxidation, and defect states leading to carrier trapping and low photoluminescence quantum yield. This work reports a colloidal synthesis of quantum confined α-Zn3P2 nanoparticles from common phosphorus precursor tris(trimethylsilyl)phosphine and environmentally benign zinc carboxylates. Shelling of the nanoparticles with zinc sulfide is shown as a method of preventing oxidation and improving the optical properties of the nanoparticles. These results show a route to stabilizing α-Zn3P2 nanoparticles for optoelectronic device applications.
金属硫族化物纳米粒子可通过尺寸、形状、组成和形态对其光电性能进行广泛调控,这使其在包括光电子学、能量存储和催化等领域得到应用。虽然镉基和铅基纳米晶体在应用中很普遍,但对其毒性的担忧促使研究人员探索基于锌和锡等环境友好型金属的其他类纳米材料。本研究的目标是从丰富、可回收且环境友好的材料中确定能提供与现有金属硫族化物系统相当性能的材料体系。具有从可见光到红外光范围能带隙的II-V族直接带隙半导体,如四方磷化锌(α-Zn3P2),是光电子学领域很有前景的候选材料。迄今为止,α-Zn3P2纳米粒子的合成一直受到阻碍,原因包括锌和磷前驱体的毒性、表面氧化以及导致载流子俘获和低光致发光量子产率的缺陷态。这项工作报道了一种从常见的磷前驱体三(三甲基硅基)膦和环境友好型羧酸锌胶体合成量子受限α-Zn3P2纳米粒子的方法。用硫化锌包覆纳米粒子被证明是一种防止氧化和改善纳米粒子光学性能的方法。这些结果展示了一条稳定α-ZnP2纳米粒子用于光电器件应用的途径。