Shi Bingnan, He Guanbai, Yang Kejian, Zhang Baitao, He Jingliang
Appl Opt. 2020 Oct 1;59(28):8834-8838. doi: 10.1364/AO.404017.
In this paper, few-layer two-dimensional (2D) GaSe nanosheets were fabricated and utilized as broadband saturable absorbers (SAs) for passively -switched (PQS) solid-state bulk lasers operating at 1.06 and 1.99 µm. For 1.06 µm laser operation, the maximum average output power, the shortest pulse width, and the largest single pulse energy were determined to be 438 mW, 285 ns, and 2.31 µJ, respectively, while for 1.99 µm PQS laser operation, they were 937 mW, 383 ns, and 9.56 µJ. Our results identified the great potential applications of few-layer 2D GaSe nanosheets for practical optical modulators such as SAs for pulsed laser generation.
在本文中,制备了少层二维(2D)GaSe纳米片,并将其用作宽带饱和吸收体(SAs),用于在1.06和1.99μm波长下工作的被动调Q(PQS)固态体激光器。对于1.06μm的激光运转,测得的最大平均输出功率、最短脉冲宽度和最大单脉冲能量分别为438 mW、285 ns和2.31 μJ,而对于1.99μm的PQS激光运转,它们分别为937 mW、383 ns和9.56 μJ。我们的结果表明,少层2D GaSe纳米片在诸如用于产生脉冲激光的饱和吸收体等实际光调制器方面具有巨大的潜在应用价值。