Ultrawideband terahertz absorber with a graphene-loaded dielectric hemi-ellipsoid.

We herein present a high-performance ultrawideband terahertz absorber with a silicon hemi-ellipsoid (SHE) on a monolayer graphene that is separated by a dielectric spacer from a bottom metal reflector. The constitution of the absorber, which includes dielectric-mode structures and unstructured monolayer graphene, can minimize undesired optical losses in metals and avoid graphene processing. The absorber achieved an ultrawide absorption bandwidth from 2 THz to more than 10 THz with an average absorption of 95.72%, and the relative bandwidth is 133%. The excellent absorption properties are owing to the presence of graphene and the shape morphing of the SHE, in which multiple discrete graphene plasmon resonances (GPRs) and continuous multimode Fabry-Perot resonances (FPRs) can be excited. By coupling the GPRs and FPRs, the absorption spectrum is extended and smoothed to realize an ultrawideband absorber. The incident angular insensitivity within 50° of the absorber is discussed. The results will shed light on the better performance of terahertz trapping, imaging, communication and detection.