Li Ge, Zhou Qingli, Ge Chen, Liang Wanlin, Deng Yuwang, Liu Changxiang, Zhang Cunlin, Du Jianyu, Jin Kui-Juan
Opt Express. 2020 Oct 12;28(21):31436-31445. doi: 10.1364/OE.404082.
We have grown VO films and combined with terahertz metamaterials to manipulate the memory effect during the insulator-to-metal transition. The temperature-dependent resonant frequency of hybrid structure shows a thermal hysteresis accompanied with frequency shift and bandwidth variation due to the presence of a VO dielectric layer. This frequency memory effect significantly depends on the metallic micro-structure. Further theoretical calculation demonstrates this phenomenon mainly originates from the different coupling strength between VO and metallic structures. Our findings could facilitate the application of VO films in the smart window and dynamical terahertz modulators.
我们已经生长出VO薄膜，并将其与太赫兹超材料相结合，以操控绝缘体到金属转变过程中的记忆效应。混合结构的温度依赖性共振频率呈现出热滞现象，由于VO介电层的存在，伴随着频率偏移和带宽变化。这种频率记忆效应显著依赖于金属微结构。进一步的理论计算表明，这种现象主要源于VO与金属结构之间不同的耦合强度。我们的研究结果有助于VO薄膜在智能窗口和动态太赫兹调制器中的应用。
