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光子陈绝缘体中无序度逐渐增加所引发的拓扑态转变的细节。

Details of the topological state transition induced by gradually increased disorder in photonic Chern insulators.

作者信息

Yang Bing, Zhang Hongfang, Shi Qiang, Wu Tong, Ma Yong, Lv Zengtao, Xiao Xia, Dong Ruixin, Yan Xunling, Zhang Xiangdong

出版信息

Opt Express. 2020 Oct 12;28(21):31487-31498. doi: 10.1364/OE.405820.

DOI:10.1364/OE.405820
PMID:33115121
Abstract

Using two well-defined empirical parameters, we numerically investigate the details of the disorder-induced topological state transition (TST) in photonic Chern insulators composed of two-dimensional magnetic photonic crystals (MPCs). The TST undergoes a gradual process, accompanied with some interesting phenomena as the disorder of rod positions in MPCs increases gradually. This kind of TST is determined by the competition among the topologically protected edge state, disorder-induced wave localizations and bulk states in the system. More interestingly, the disorder-induced wave localizations almost have no influence on the one-way propagation of the original photonic topological states (PTSs), and the unidirectional nature of the PTSs at the edge area can survive even when the bulk states arise at stronger disorders. Our results provide detailed demonstrations for the deep understanding of fundamental physics underlying topology and disorder and are also of practical significance in device fabrication with PTSs.

摘要

利用两个明确的经验参数,我们对由二维磁性光子晶体(MPC)构成的光子陈绝缘体中无序诱导的拓扑态转变(TST)细节进行了数值研究。TST经历一个渐进过程,随着MPC中棒位置无序度逐渐增加,会伴随一些有趣的现象。这种TST由系统中拓扑保护的边缘态、无序诱导的波局域化和体态之间的竞争决定。更有趣的是,无序诱导的波局域化对原始光子拓扑态(PTS)的单向传播几乎没有影响,并且即使在更强无序度下体态出现时,边缘区域PTS的单向特性仍能保留。我们的结果为深入理解拓扑和无序背后的基础物理提供了详细论证,并且在利用PTS进行器件制造方面也具有实际意义。

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