Sendi Rabab Khaled, Ali Afaf M
Physics Department, Faculty of Applied Science, Umm Al-Qura University, Saudi Arabia.
Physics Department, Faculty of Science, Mansoura University, Egypt.
Microsc Res Tech. 2021 Apr;84(4):723-729. doi: 10.1002/jemt.23631. Epub 2020 Oct 29.
A conventional ceramic processing method was applied to manufacture high-density 20-nm ZnO-Bi O -Mn O varistor ceramics. Different cooling rates in the range of 135-540°C/h led to a relatively slight influence on the microstructure, varistor voltage, and leakage current. In contrast, these rates strongly affected the nonlinear exponent. The specific surface area of the 20-nm ZnO nanoparticle may have led to an intense solid-state reaction even at a low cooling rate. Superior nonlinearity, with 59.7 μA nonlinear current leakage and 273.5 μA leakage current, was achieved at the 135°C/h cooling rate. The differences in the cooling rates led to a remarkable change in the material's stability under direct current (DC)-accelerated aging stress in the following order: 135°C/hr ˃ 270°C/hr˃405°C/hr ˃ 540°C/hr.
采用传统陶瓷加工方法制备了高密度20nm的ZnO-Bi₂O₃-MnO₂压敏电阻陶瓷。135-540°C/h范围内的不同冷却速率对微观结构、压敏电压和漏电流的影响相对较小。相比之下,这些速率对非线性指数有强烈影响。20nm ZnO纳米颗粒的比表面积可能导致即使在低冷却速率下也会发生强烈的固态反应。在135°C/h的冷却速率下,实现了优异的非线性,非线性漏电流为59.7μA,漏电流为273.5μA。冷却速率的差异导致材料在直流(DC)加速老化应力下的稳定性发生显著变化,顺序如下:135°C/hr ˃ 270°C/hr˃405°C/hr ˃ 540°C/hr。