Panzeri G, Cristina M, Jagadeesh M S, Bussetti G, Magagnin L
Dipartimento di Chimica, Materiali e Ingegneria Chimica Giulio Natta, Politecnico di Milano, 20131, Milan, Italy.
Dipartimento di Fisica, Politecnico di Milano, 20133, Milan, Italy.
Sci Rep. 2020 Oct 30;10(1):18730. doi: 10.1038/s41598-020-75700-7.
In this work, a three-layered heterostructure CuO/CuO/CuS was obtained through a low-cost and large-area fabrication route comprising electrodeposition, thermal oxidation, and reactive annealing in a sulfur atmosphere. Morphological, microstructural, and compositional analysis (AFM, SEM, XRD, EDS, XPS) were carried out to highlight the surface modification of cuprous oxide film after oxidation and subsequent sulfurization. Impedance, voltammetric, and amperometric photoelectrochemical tests were performed on CuO, CuO/CuO, and CuO/CuO/CuS photocathodes in a sodium sulfate solution (pH 5), under 100 mW cm AM 1.5 G illumination. A progressive improvement in terms of photocurrent and stability was observed after oxidation and sulfurization treatments, reaching a maximum of - 1.38 mA cm at 0 V versus RHE for the CuS-modified CuO/CuO electrode, corresponding to a ~ 30% improvement. The feasibility of the proposed method was demonstrated through the fabrication of a large area photoelectrode of 10 cm, showing no significant differences in characteristics if compared to a small area photoelectrode of 1 cm.
在本工作中，通过一种低成本且大面积的制备路线，包括电沉积、热氧化以及在硫气氛中进行反应退火，获得了一种三层异质结构CuO/CuO/CuS。进行了形态学、微观结构和成分分析（原子力显微镜、扫描电子显微镜、X射线衍射、能谱分析、X射线光电子能谱），以突出氧化及随后硫化后氧化亚铜薄膜的表面改性。在100 mW cm AM 1.5 G光照下，在pH为5的硫酸钠溶液中，对CuO、CuO/CuO和CuO/CuO/CuS光阴极进行了阻抗、伏安和安培光化学测试。在氧化和硫化处理后，观察到光电流和稳定性方面有逐步改善，对于CuS修饰的CuO/CuO电极，在相对于可逆氢电极0 V时，光电流最大达到 -1.38 mA cm，相当于提高了约30%。通过制备10 cm的大面积光电极，证明了所提出方法的可行性，与1 cm的小面积光电极相比，其特性没有显著差异。
