Fabrication of antireflection microstructures on the surface of GaSe crystal by single-pulse femtosecond laser ablation.

GaSe crystals are promising as nonlinear optical converters in the mid- and far-IR ranges. However, it is challenging to increase the GaSe surface transmittance of 77% with conventional antireflection coatings because of poor surface quality, leading to coating adhesion problems. Antireflection microstructures (ARMs) offer an alternative way of increasing surface transmittance. In this work, ARMs were fabricated on the surface of a GaSe plate by single-pulse femtosecond laser ablation. An average GaSe surface transmittance of 94% in the 7-11 µm range and a maximum transmittance of 97.8% at 8.5 µm were obtained. The proposed method can be used to increase the efficiency of GaSe-based nonlinear converters.