Bushunov Andrey A, Teslenko Andrei A, Tarabrin Mikhail K, Lazarev Vladimir A, Isaenko Lyudmila I, Eliseev Alexander P, Lobanov Sergei I
Opt Lett. 2020 Nov 1;45(21):5994-5997. doi: 10.1364/OL.404515.
GaSe crystals are promising as nonlinear optical converters in the mid- and far-IR ranges. However, it is challenging to increase the GaSe surface transmittance of 77% with conventional antireflection coatings because of poor surface quality, leading to coating adhesion problems. Antireflection microstructures (ARMs) offer an alternative way of increasing surface transmittance. In this work, ARMs were fabricated on the surface of a GaSe plate by single-pulse femtosecond laser ablation. An average GaSe surface transmittance of 94% in the 7-11 µm range and a maximum transmittance of 97.8% at 8.5 µm were obtained. The proposed method can be used to increase the efficiency of GaSe-based nonlinear converters.
硒化镓晶体有望成为中红外和远红外波段的非线性光学转换器。然而，由于表面质量较差，采用传统抗反射涂层将硒化镓表面透过率提高到77%具有挑战性，这会导致涂层附着力问题。抗反射微结构（ARMs）提供了一种提高表面透过率的替代方法。在这项工作中，通过单脉冲飞秒激光烧蚀在硒化镓板表面制备了抗反射微结构。在7-11μm范围内获得了平均94%的硒化镓表面透过率，在8.5μm处的最大透过率为97.8%。所提出的方法可用于提高基于硒化镓的非线性转换器的效率。
