Koley Biplab, Lakshan Achintya, Raghuvanshi Parul R, Singh Charanpreet, Bhattacharya Amrita, Jana Partha P
Department of Chemistry, IIT Kharagpur, Kharagpur, 721302, India.
Department of Metallurgical Eng. and Materials Science, IIT Bombay, Bombay, 400076, India.
Angew Chem Int Ed Engl. 2021 Apr 12;60(16):9106-9113. doi: 10.1002/anie.202014222. Epub 2021 Mar 10.
Ultralow thermal conductivity draws great attention in a variety of fields of applications such as thermoelectrics and thermal barrier coatings. Herein, the crystal structure and transport properties of Cu TiSe are reported. Cu TiSe is a unique example of a non-toxic and low-cost material that exhibits a lattice ultra-low thermal conductivity of 0.19 Wm K at room temperature. The main contribution to the unusually low thermal conductivity is connected with the atomic lattice and its dynamics. This ultralow value of lattice thermal conductivity (k ) can be attributed to the presence of the localized modes of Cu, which partially hybridize with the Se atoms, which in turn leads to avoidance of crossing of acoustic phonon modes that reach the zone boundary with a reduced frequency. Like a phonon glass electron crystal, Cu TiSe could also open a route to efficient thermoelectric materials, even, with chalcogenides of relatively high electrical resistivity and a large band gap, provided that their structures offer a sublattice with lightly bound cations.
超低热导率在热电学和热障涂层等各种应用领域引起了极大关注。在此,报道了CuTiSe的晶体结构和输运性质。CuTiSe是一种无毒且低成本材料的独特实例,在室温下表现出0.19Wm⁻¹K的晶格超低热导率。对异常低热导率的主要贡献与原子晶格及其动力学有关。这种晶格热导率(k)的超低值可归因于Cu的局域模式的存在,其与Se原子部分杂化,进而导致到达具有降低频率的区域边界的声子模式避免交叉。像声子玻璃电子晶体一样,CuTiSe也可能为高效热电材料开辟一条途径,即使对于具有相对高电阻率和大带隙的硫族化物,只要其结构提供具有轻束缚阳离子的亚晶格。