Ray Rajeev, Nakka Nagaraju, Pal Suman Kalyan
School Of Basic Sciences, IIT Mandi, IIT Mandi, Mandi, 175001, INDIA.
IIT Mandi, Mandi, Himachal Pradesh, INDIA.
Nanotechnology. 2020 Nov 9. doi: 10.1088/1361-6528/abc8b2.
Organo-lead halide perovskite materials have opened up a great opportunity to develop high performance photodetectors because of their superior optoelectronic properties. The main issue with perovskite-only photodetector is severe carrier recombination. Integration of perovskite with high-conductive materials such as graphene or transition metal sulfides certainly improved the photoresponsivity. However, achieving high overall performance remains a challenge. Here, an improved photodetector is constructed by perovskite quantum dots (QDs) and atomic layer deposited (ALD) ultrathin TiOfilms. The designed CHNHPbBrQD/TiObilayer device displays inclusive performance with on/off ratio of 6.3×10, responsivity of 85 AW, and rise/decay time of 0.09/0.11 s. Furthermore, we demonstrate that interface plays a crucial role in determining the device current and enhance the overall performance of heterostructure photodetector through interface engineering. We believe that this work can provide a strategy to accelerate development of high-performance solution-processed perovskite photodetectors.
有机铅卤化物钙钛矿材料因其优异的光电性能，为开发高性能光电探测器提供了巨大机遇。仅使用钙钛矿的光电探测器的主要问题是严重的载流子复合。将钙钛矿与高导电材料（如石墨烯或过渡金属硫化物）集成，确实提高了光响应度。然而，实现高整体性能仍然是一个挑战。在此，通过钙钛矿量子点（QDs）和原子层沉积（ALD）超薄TiO薄膜构建了一种改进的光电探测器。设计的CH₃NH₃PbBr QD/TiO₂双层器件具有综合性能，开/关比为6.3×10⁴，响应度为85 A/W，上升/衰减时间为0.09/0.11 s。此外，我们证明界面在决定器件电流方面起着关键作用，并通过界面工程提高了异质结构光电探测器的整体性能。我们相信这项工作可以提供一种策略，以加速高性能溶液法制备的钙钛矿光电探测器的开发。
