Suppr超能文献

全氟并五苯-并五苯(001)单晶界面电荷转移的空间各向异性及其与薄膜器件的相关性。

Spatial Anisotropy of Charge Transfer at Perfluoropentacene-Pentacene (001) Single-Crystal Interfaces and its Relevance for Thin Film Devices.

作者信息

Hammer Sebastian, Zeiser Clemens, Deutsch Marian, Engels Bernd, Broch Katharina, Pflaum Jens

机构信息

Experimental Physics VI, Julius Maximilians University Würzburg, Am Hubland, 97074 Würzburg, Germany.

Institute for Applied Physics, Eberhard Karls University Tübingen, Auf der Morgenstelle 10, 72076 Tübingen, Germany.

出版信息

ACS Appl Mater Interfaces. 2020 Nov 25;12(47):53547-53556. doi: 10.1021/acsami.0c17152. Epub 2020 Nov 9.

Abstract

Archetypal donor-acceptor (D-A) interfaces composed of perfluoropentacene (PFP) and pentacene (PEN) are examined for charge transfer (CT) state formation and energetics as a function of their respective molecular configuration. To exclude morphological interference, our structural as well as highly sensitive differential reflectance spectroscopy studies were carried out on PFP thin films epitaxially grown on PEN(001) single-crystal facets. Whereas the experimental data supported by complementary theoretical calculations confirm the formation of a strong CT state in the case of a cofacial PFP-PEN stacking, CT formation is energetically less favorable and thus absent for the corresponding head-to-tail configuration as disclosed for the first time. In view of technological implementations, the knowledge gained on the single-crystal references is transferred to thin-film diodes composed of either stacked PFP/PEN bilayers or mixed PFP:PEN heterojunction interfaces. As demonstrated, their electronic and electroluminescent behavior can be consistently described by the absence or presence of interfacial CT states. Thus, our results hint at the thorough design of D-A interfaces to achieve the highest device performances.

摘要

研究了由全氟并五苯(PFP)和并五苯(PEN)组成的典型供体-受体(D-A)界面,以考察电荷转移(CT)态的形成及其能量与各自分子构型的关系。为排除形态干扰,我们对在PEN(001)单晶面上外延生长的PFP薄膜进行了结构以及高灵敏度差分反射光谱研究。尽管互补理论计算支持的实验数据证实了在共面PFP-PEN堆叠情况下形成了强CT态,但首次发现相应的头对头构型在能量上不利于CT形成,因此不存在CT形成。鉴于技术应用,从单晶参考中获得的知识被应用于由堆叠的PFP/PEN双层或混合PFP:PEN异质结界面组成的薄膜二极管。结果表明,它们的电子和电致发光行为可以通过界面CT态的存在与否得到一致描述。因此,我们的结果表明需要对D-A界面进行深入设计以实现最高的器件性能。

文献检索

告别复杂PubMed语法,用中文像聊天一样搜索,搜遍4000万医学文献。AI智能推荐,让科研检索更轻松。

立即免费搜索

文件翻译

保留排版,准确专业,支持PDF/Word/PPT等文件格式,支持 12+语言互译。

免费翻译文档

深度研究

AI帮你快速写综述,25分钟生成高质量综述,智能提取关键信息,辅助科研写作。

立即免费体验