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官能团在高效稳定的倒置钙钛矿太阳能电池(效率超过21%)的缺陷钝化和能带调制中的关键作用

Critical Role of Functional Groups in Defect Passivation and Energy Band Modulation in Efficient and Stable Inverted Perovskite Solar Cells Exceeding 21% Efficiency.

作者信息

Zheng Jiawei, Chen Jiangzhao, Ouyang Dan, Huang Zhanfeng, He Xinjun, Kim Jinwook, Choy Wallace C H

机构信息

Department of Electrical and Electronic Engineering, The University of Hong Kong, Pok Fu Lam Road, Hong Kong SAR, China.

Key Laboratory of Optoelectronic Technology & Systems (Ministry of Education), College of Optoelectronic Engineering, Chongqing University, Chongqing 400044, China.

出版信息

ACS Appl Mater Interfaces. 2020 Dec 23;12(51):57165-57173. doi: 10.1021/acsami.0c18862. Epub 2020 Dec 9.

Abstract

Interfaces in perovskite solar cells (PSCs) are closely related to their power conversion efficiency (PCE) and stability. It is highly desirable to minimize the interfacial nonradiative recombination losses through rational interfacial engineering. Herein we develop an effective and easily reproducible interface engineering strategy where three mercaptobenzimidazole (MBI)-based molecules are employed to modify the perovskite/electron transport layer (ETL) interface. MBI and MBI-OCH can not only passivate defects at surface and grain boundaries (GBs) of perovskite films but can also improve energy level alignment (ELA), which leads to enhanced PCE and stability. Consequently, the PCE is improved from 19.5% for the control device to 21.2% for MBI-modified device, which is among the best reported inverted MAPbI-based PSCs. In contrast, incorporation of MBI-NO increases defect density and negligibly influences the energy level alignment. This work indicates that defect passivation and ELA modulation can be achieved simultaneously through modulating functional groups in interface modification molecules.

摘要

钙钛矿太阳能电池(PSCs)中的界面与其功率转换效率(PCE)和稳定性密切相关。通过合理的界面工程将界面非辐射复合损失降至最低是非常有必要的。在此,我们开发了一种有效且易于重现的界面工程策略,其中使用三种基于巯基苯并咪唑(MBI)的分子来修饰钙钛矿/电子传输层(ETL)界面。MBI和MBI - OCH不仅可以钝化钙钛矿薄膜表面和晶界(GBs)处的缺陷,还可以改善能级排列(ELA),从而提高PCE和稳定性。因此,PCE从对照器件的19.5%提高到MBI修饰器件的21.2%,这是报道的基于MAPbI的最佳倒置PSCs之一。相比之下,加入MBI - NO会增加缺陷密度,并且对能级排列的影响可忽略不计。这项工作表明,通过调节界面修饰分子中的官能团,可以同时实现缺陷钝化和ELA调制。

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