Zhong Mianzeng, Meng Haotong, Liu Sijie, Yang Huai, Shen Wanfu, Hu Chunguang, Yang Juehan, Ren Zhihui, Li Bo, Liu Yunyan, He Jun, Xia Qinglin, Li Jingbo, Wei Zhongming
Hunan Key Laboratory of Super-microstructure and Ultrafast Process, School of Physics and Electronics, Central South University, Changsha 410083, Hunan, China.
State Key Laboratory of Superlattices and Microstructures, Institute of Semiconductors, Chinese Academy of Sciences & Center of Materials Science and Optoelectronics Engineering, University of Chinese Academy of Sciences, Beijing 100083, China.
ACS Nano. 2021 Jan 26;15(1):1701-1709. doi: 10.1021/acsnano.0c09357. Epub 2020 Dec 17.
Low-symmetry two-dimensional (2D) semiconductors have attracted great attention because of their rich in-plane anisotropic optical, electrical, and thermoelectric properties and potential applications in multifunctional nanoelectronic and optoelectronic devices. However, anisotropic 2D semiconductors with high performance are still very limited. Here, we report the systematic study of in-plane anisotropic properties in few-layered b-As that is a narrow-gap semiconductor, based on the experimental and theoretical investigations. According to experimental results, we have come up with a simple method for identifying the orientation of b-As crystals. Meanwhile, we show that the maximum mobility of electrons and holes was measured in the in-plane armchair (AC) direction. The measured maximum electron mobility ratio is about 2.68, and the hole mobility ratio is about 1.79.
低对称性二维半导体因其丰富的面内各向异性光学、电学和热电特性以及在多功能纳米电子和光电器件中的潜在应用而备受关注。然而，高性能的各向异性二维半导体仍然非常有限。在此，我们基于实验和理论研究，报告了对窄带隙半导体——少层b-As的面内各向异性特性的系统研究。根据实验结果，我们提出了一种识别b-As晶体取向的简单方法。同时，我们表明，电子和空穴的最大迁移率是在面内扶手椅（AC）方向测量的。测得的最大电子迁移率比约为2.68，空穴迁移率比约为1.79。
