Halim Joseph, Etman Ahmed S, Elsukova Anna, Polcik Peter, Palisaitis Justinas, Barsoum Michel W, Persson Per O Å, Rosen Johanna
Thin Film Physics Division, Department of Physics, Chemistry and Biology (IFM), Linköping University, SE-58183 Linköping, Sweden.
Nanoscale. 2021 Jan 7;13(1):311-319. doi: 10.1039/d0nr07045a. Epub 2020 Dec 18.
A vacancy-ordered MXene, MoCT, obtained from the selective etching of Al and Sc from the parent i-MAX phase (MoSc)AlC has previously shown excellent properties for supercapacitor applications. Attempts to synthesize the same MXene from another precursor, (MoY)AlC, have not been able to match its forerunner. Herein, we show that the use of an AlY alloy instead of elemental Al and Y for the synthesis of (MoY)AlC i-MAX, results in a close to 70% increase in sample purity due to the suppression of the main secondary phase, MoAlC. Furthermore, through a modified etching procedure, we obtain a MoCT MXene of high structural quality and improve the yield by a factor of 6 compared to our previous efforts. Free-standing films show high volumetric (1308 F cm) and gravimetric (436 F g) capacitances and a high stability (98% retention) at the level of, or even beyond, those reported for the MoCT MXene produced from the Sc-based i-MAX. These results are of importance for the realization of high quality MXenes through use of more abundant elements (Y vs. Sc), while also reducing waste (impurity) material and facilitating the synthesis of a high-performance material for applications.
一种通过从母体i-MAX相(MoSc)AlC中选择性蚀刻Al和Sc获得的空位有序MXene——MoCT,此前已显示出在超级电容器应用方面的优异性能。尝试从另一种前驱体(MoY)AlC合成相同的MXene,但未能达到其前身的性能。在此,我们表明,使用AlY合金而非元素Al和Y来合成(MoY)AlC i-MAX,由于抑制了主要次生相MoAlC,样品纯度提高了近70%。此外,通过改进的蚀刻工艺,我们获得了结构质量高的MoCT MXene,与之前的努力相比,产率提高了6倍。独立薄膜显示出高体积电容(1308 F/cm³)和高重量电容(436 F/g),并且在与基于Sc的i-MAX制备的MoCT MXene相当甚至更高的水平上具有高稳定性(98%保留率)。这些结果对于通过使用更丰富的元素(Y对Sc)来实现高质量MXene非常重要,同时还减少了废料(杂质)并促进了用于应用的高性能材料的合成。