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经颅电刺激对精神分裂症患者工作记忆的影响:一项系统评价和荟萃分析。

Effects of transcranial electrical stimulation on working memory in patients with schizophrenia: A systematic review and meta-analysis.

作者信息

Liu Yong, Gu Nannan, Cao Xinyi, Zhu Yikang, Wang Jijun, Smith Robert C, Li Chunbo

机构信息

Shanghai Key Laboratory of Psychotic Disorders, Shanghai Mental Health Center, Shanghai Jiao Tong University School of Medicine, Shanghai, China.

Clinical Neurocognitive Research Center, Shanghai Key Laboratory of Psychotic Disorders, Shanghai Mental Health Center, Shanghai Jiao Tong University School of Medicine, Shanghai, China.

出版信息

Psychiatry Res. 2021 Feb;296:113656. doi: 10.1016/j.psychres.2020.113656. Epub 2020 Dec 23.

DOI:10.1016/j.psychres.2020.113656
PMID:33360429
Abstract

To investigate the immediate and lasting effects of transcranial electrical stimulation (tES) on working memory (WM) in schizophrenia. We performed a literature search to identify randomized controlled trials (RCTs) evaluating the ability of tES to ameliorate WM. Twelve studies were included: 215 patients in the active stimulation group and 214 in the sham stimulation group. Meta-analysis demonstrated a significant efficacy of tES on WM in follow up, a summary of one or more assessments weeks after the last tES session (standardized mean difference (SMD) 0.33, 95% confidence interval (CI) 0.04 to 0.62; p = 0.02; n = 190, 4 studies; I = 33%) compared to sham tES, while non-significant results were observed for WM assessed immediately after the last tES session (SMD 0.14, 95% CI -0.12 to 0.41; p = 0.30; n = 417, 11 studies; I = 41%) in schizophrenia. There was no significant difference between the two groups in tolerability and dropouts. Evidence of low quality indicates that effects of tES on WM in schizophrenia may appear a few weeks after the last tES session, but not always be present when tested immediately after the last tES session. Further large-scale RCTs with a parallel-group design, sample size estimation and a longer follow-up period are needed.

摘要

为研究经颅电刺激(tES)对精神分裂症患者工作记忆(WM)的即时和长期影响。我们进行了文献检索,以确定评估tES改善WM能力的随机对照试验(RCT)。共纳入12项研究:主动刺激组215例患者,假刺激组214例患者。荟萃分析表明,在末次tES治疗后数周进行的一项或多项评估总结中,与假tES相比,tES对WM具有显著疗效(标准化均数差(SMD)0.33,95%置信区间(CI)0.04至0.62;p = 0.02;n = 190,4项研究;I² = 33%),而在末次tES治疗后立即评估WM时未观察到显著结果(SMD 0.14,95% CI -0.12至0.41;p = 0.30;n = 417,11项研究;I² = 41%)。两组在耐受性和脱落率方面无显著差异。低质量证据表明,tES对精神分裂症患者WM的影响可能在末次tES治疗后数周出现,但在末次tES治疗后立即测试时并不总是存在。需要进一步开展具有平行组设计、样本量估计和更长随访期的大规模RCT。

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