Cranston Rosemary R, Vebber Mário C, Berbigier Jônatas Faleiro, Rice Nicole A, Tonnelé Claire, Comeau Zachary J, Boileau Nicholas T, Brusso Jaclyn L, Shuhendler Adam J, Castet Frédéric, Muccioli Luca, Kelly Timothy L, Lessard Benoît H
Department of Chemical and Biological Engineering, University of Ottawa, 161 Louis Pasteur, Ottawa, ON, Canada K1N 6N5.
Department of Chemistry, University of Saskatchewan, 110 Science Place, Saskatoon, SK, Canada S7N 5C9.
ACS Appl Mater Interfaces. 2021 Jan 13;13(1):1008-1020. doi: 10.1021/acsami.0c17657. Epub 2020 Dec 28.
Metal and metalloid phthalocyanines are an abundant and established class of materials widely used in the dye and pigment industry as well as in commercial photoreceptors. Silicon phthalocyanines (SiPcs) are among the highest-performing n-type semiconductor materials in this family when used in organic thin-film transistors (OTFTs) as their performance and solid-state arrangement are often increased through axial substitution. Herein, we study eight axially substituted SiPcs and their integration into solution-processed n-type OTFTs. Electrical characterization of the OTFTs, combined with atomic force microscopy (AFM), determined that the length of the alkyl chain affects device performance and thin-film morphology. The effects of high-temperature annealing and spin coating time on film formation, two key processing steps for fabrication of OTFTs, were investigated by grazing-incidence wide-angle X-ray scattering (GIWAXS) and X-ray diffraction (XRD) to elucidate the relationship between thin-film microstructure and device performance. Thermal annealing was shown to change both film crystallinity and SiPc molecular orientation relative to the substrate surface. Spin time affected film crystallinity, morphology, and interplanar -spacing, thus ultimately modifying device performance. Of the eight materials studied, bis(tri-butylsilyl oxide) SiPc exhibited the greatest electron field-effect mobility (0.028 cm V s, a threshold voltage of 17.6 V) of all reported solution-processed SiPc derivatives.
金属和类金属酞菁是一类丰富且成熟的材料，广泛应用于染料和颜料工业以及商业光感受器中。硅酞菁（SiPcs）在该家族中是用于有机薄膜晶体管（OTFTs）时性能最高的n型半导体材料之一，因为通过轴向取代，其性能和固态排列通常会得到提升。在此，我们研究了八种轴向取代的SiPcs及其在溶液处理的n型OTFTs中的集成。OTFTs的电学表征与原子力显微镜（AFM）相结合，确定了烷基链的长度会影响器件性能和薄膜形态。通过掠入射广角X射线散射（GIWAXS）和X射线衍射（XRD）研究了高温退火和旋涂时间对成膜的影响，这是制造OTFTs的两个关键工艺步骤，以阐明薄膜微观结构与器件性能之间的关系。结果表明，热退火会改变薄膜的结晶度以及SiPc分子相对于衬底表面的取向。旋涂时间会影响薄膜的结晶度、形态和晶面间距，从而最终改变器件性能。在所研究的八种材料中，双（三丁基硅氧基）SiPc在所有已报道的溶液处理SiPc衍生物中表现出最大的电子场效应迁移率（0.028 cm² V⁻¹ s⁻¹），阈值电压为17.6 V。
