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用于n型热电复合材料的萘二亚胺-联噻吩共聚物与单壁碳纳米管的分子掺杂

Molecular Doping of a Naphthalene Diimide-Bithiophene Copolymer and SWCNTs for n-Type Thermoelectric Composites.

作者信息

Liu Ye, Villalva Diego Rosas, Sharma Anirudh, Haque Md Azimul, Baran Derya

机构信息

Physical Science and Engineering Division, KAUST Solar Center (KSC), King Abdullah University of Science and Technology, Thuwal 23955-6900, Saudi Arabia.

出版信息

ACS Appl Mater Interfaces. 2021 Jan 13;13(1):411-418. doi: 10.1021/acsami.0c16740. Epub 2020 Dec 29.

Abstract

Molecular doping is a powerful tool to tune the thermoelectric (TE) properties of solution-processed semiconductors. In this work, we prepared a binary composite and effectively doped both of its constituents, that is, naphthalene diimide-bithiophene copolymers (PNDI2OD-T2) and single-walled carbon nanotubes (SWCNTs), by a 1-benzimidazole derivative (N-DMBI). The doped composites show an n-type character and an in-plane TE figure of merit (), exceeding the values obtained with the doped polymers. The use of SWCNTs consistently results in a higher σ with a maximum value above 10 S/cm, resulting in the highest power factor of 18.1 μW/mK for an SWCNT loading of 45.5 wt %. Furthermore, an SWCNT content up to 9 wt % does not compromise the low thermal conductivity of the polymer matrices, leading to a value of 0.0045. The n-type composites show good solution processability and relatively stable Seebeck coefficients upon air exposure for 8 months.

摘要

分子掺杂是调节溶液处理半导体热电(TE)性能的有力工具。在这项工作中,我们制备了一种二元复合材料,并通过1-苯并咪唑衍生物(N-DMBI)有效地对其两种成分进行了掺杂,即萘二亚胺-联噻吩共聚物(PNDI2OD-T2)和单壁碳纳米管(SWCNT)。掺杂后的复合材料呈现n型特性和面内热电优值(),超过了掺杂聚合物所获得的值。使用SWCNT始终会导致更高的电导率σ,最大值超过10 S/cm,对于45.5 wt%的SWCNT负载量,功率因数最高可达18.1 μW/mK。此外,高达9 wt%的SWCNT含量不会损害聚合物基体的低热导率,导致值为0.0045。n型复合材料表现出良好的溶液可加工性,并且在空气中暴露8个月后塞贝克系数相对稳定。

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