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一种可重构宽带集成超材料太赫兹器件的理论设计。

Theoretical design of a reconfigurable broadband integrated metamaterial terahertz device.

作者信息

Li Hui, Xu Wenhui, Cui Qi, Wang Yan, Yu Jiang

出版信息

Opt Express. 2020 Dec 21;28(26):40060-40074. doi: 10.1364/OE.414961.

Abstract

An actively reconfigurable broadband terahertz (THz) metamaterial functional device based on the phase-change material vanadium dioxide (VO) and two-dimensional graphene material is theoretically proposed and demonstrated. The device has excellent tolerance under oblique incidence. When the VO is in the metallic state, and the Fermi energy of graphene is fixed at 0.1 eV, the designed device acts as a broadband THz absorber in the transverse magnetic (TM) polarization mode. The absorptance bandwidth exceeds 0.55 THz with a complete absorption intensity of more than 90%. In this state, the absorber operates as a broadband modulator with the total modulation depth exceeding 91.5% as the continually decreased conductivity of VO from 200000 S/m to 10 S/m. In the transverse electric (TE) polarization process, the structure behaves as a dual-band absorber with two perfect absorption peaks. When the conductivity of VO is changed, the tunable absorber can also be regarded as an absorptance modulator, with a maximum modulation intensity of 92.1%. Alternatively, when VO behaves as an insulator at room temperature in the TE polarization mode, a strong broadband electromagnetically induced transparency (EIT) window is obtained, with a bandwidth exceeding 0.42 THz in the transmittance spectrum. By varying the Fermi energy of graphene from 0 to 0.9 eV, the EIT-like window or broadband transmission spectrum (in TM mode) can be switched. The results indicate that the device can also be operated as a modulator in the transmission mode. The impedance matching theory is used, and electric field distributions are analyzed to quantify the physical mechanism. An advantage of the manipulation of the polarization angle is that the modulation performance of the proposed multi-functional THz device can be regulated after fabricated.

摘要

理论上提出并论证了一种基于相变材料二氧化钒(VO₂)和二维石墨烯材料的主动可重构宽带太赫兹(THz)超材料功能器件。该器件在斜入射下具有出色的耐受性。当VO₂处于金属态且石墨烯的费米能固定在0.1 eV时,所设计的器件在横向磁(TM)极化模式下用作宽带太赫兹吸收器。吸收带宽超过0.55 THz,完全吸收强度超过90%。在此状态下,随着VO₂的电导率从200000 S/m持续降低到10 S/m,吸收器作为宽带调制器运行,总调制深度超过91.5%。在横向电(TE)极化过程中,该结构表现为具有两个完美吸收峰的双波段吸收器。当VO₂的电导率改变时,可调吸收器也可视为吸收度调制器,最大调制强度为92.1%。或者,当VO₂在室温下于TE极化模式下表现为绝缘体时,可获得一个强宽带电磁诱导透明(EIT)窗口,其在透射光谱中的带宽超过0.42 THz。通过将石墨烯的费米能从0改变到0.9 eV,可以切换类EIT窗口或宽带透射光谱(在TM模式下)。结果表明该器件在透射模式下也可作为调制器运行。利用阻抗匹配理论并分析电场分布来量化物理机制。操纵极化角的一个优点是,所提出的多功能太赫兹器件的调制性能在制造后可以调节。

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