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通过控制溶液态聚合物聚集体的动力学实现聚合物半导体的高效n型掺杂

Efficient n-Doping of Polymeric Semiconductors through Controlling the Dynamics of Solution-State Polymer Aggregates.

作者信息

Xiong Miao, Yan Xinwen, Li Jia-Tong, Zhang Song, Cao Zhiqiang, Prine Nathaniel, Lu Yang, Wang Jie-Yu, Gu Xiaodan, Lei Ting

机构信息

Key Laboratory of Polymer Chemistry and Physics of Ministry of Education, School of Materials Science and Engineering, College of Chemistry and Molecular Engineering, Peking University, Beijing, 100871, China.

School of Polymer Science and Engineering, Center for Optoelectronic Materials and Devices, The University of Southern Mississippi, Hattiesburg, MS, 39406, USA.

出版信息

Angew Chem Int Ed Engl. 2021 Apr 6;60(15):8189-8197. doi: 10.1002/anie.202015216. Epub 2021 Mar 3.

Abstract

Doping of polymeric semiconductors limits the miscibility between polymers and dopants. Although significant efforts have been devoted to enhancing miscibility through chemical modification, the electrical conductivities of n-doped polymeric semiconductors are usually below 10 S cm . We report a different approach to overcome the miscibility issue by modulating the solution-state aggregates of conjugated polymers. We found that the solution-state aggregates of conjugated polymers not only changed with solvent and temperature but also changed with solution aging time. Modulating the solution-state polymer aggregates can directly influence their solid-state microstructures and miscibility with dopants. As a result, both high doping efficiency and high charge-carrier mobility were simultaneously obtained. The n-doped electrical conductivity of P(PzDPP-CT2) can be tuned up to 32.1 S cm . This method can also be used to improve the doping efficiency of other polymer systems (e.g. N2200) with different aggregation tendencies and behaviors.

摘要

聚合物半导体的掺杂限制了聚合物与掺杂剂之间的混溶性。尽管人们已经付出了巨大努力通过化学修饰来提高混溶性,但n型掺杂聚合物半导体的电导率通常低于10 S cm 。我们报告了一种通过调节共轭聚合物的溶液态聚集体来克服混溶性问题的不同方法。我们发现共轭聚合物的溶液态聚集体不仅会随溶剂和温度变化,还会随溶液老化时间变化。调节溶液态聚合物聚集体可以直接影响它们的固态微观结构以及与掺杂剂的混溶性。结果,同时获得了高掺杂效率和高电荷载流子迁移率。P(PzDPP-CT2)的n型掺杂电导率可以调至32.1 S cm 。该方法还可用于提高具有不同聚集倾向和行为的其他聚合物体系(如N2200)的掺杂效率。

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